Electron beam interaction with substrate in electron beam lithography: A scaling experiment to test transport theory

1988 ◽  
Vol 6 (6) ◽  
pp. 2053 ◽  
Author(s):  
H. Schmoranzer
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Transport Theory ◽  
Beam Interaction

Formation Of Two-Dimensional Photonic Crystals With Cavities Arrays In Silicon

2016 ◽  
Vol 11 (1) ◽  
pp. 88-93
Author(s):  
Dmitriy Utkin ◽  
Aleksandr Shklyaev ◽  
Fedor Dultsev ◽  
Aleksandr Latyshev
Keyword(s):  
Electron Beam ◽  
Photonic Crystals ◽  
Electron Beam Lithography ◽  
Spatial Distributions ◽  
Two Dimensional ◽  
Interference Effects ◽  
Technological Parameters ◽  
Beam Interaction ◽  
Cavity Array ◽  
Better Than

Specific aspects of finely focused electron beam interaction with the PMMA-950K resist for the fabrication of closely spaced holes having inhomogeneous spatial distributions are studied. The technological parameters for the creation of two-dimensional photonic crystals with microcavities (missing holes) arrays, which allow obtaining the lateral sizes of the structure within the accuracy better than 2 %, in silicon using electron-beam lithography are determined. Such holes fabrication accuracy is thought to be sufficient to study the interference effects of cavity array radiation in twodimensional photonic crystals.

A Study of Amorphous Chalcogenides by Electron Microscopy and Analysis

1998 ◽  
Vol 4 (S2) ◽  
pp. 714-715
Author(s):  
A. G. Fitzgerald ◽  
K. Mietzsch
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Diffusion Process ◽  
Electron Beam Lithography ◽  
Interaction Process ◽  
Metal Diffusion ◽  
Process Understanding ◽  
Amorphous Chalcogenides ◽  
Potential Applications ◽  
Beam Interaction

Amorphous chalcogenides films coated with certain metals are known to possess a remarkable sensitivity to radiation. Based on these effects they have found several important applications in the production of microcircuits, e.g. as resists in photo- and electron beam lithography. A variety of chalcogenides in combination with a range of metals has been extensively investigated with regard to potential applications in the fabrication of semiconductor devices.The objectives of the present project are to extend knowledge of the behaviour of amorphous chalcogenides in contact with metals. This includes studying the metal diffusion process, understanding the film-electron beam interaction process and evaluating the potential of the metal lines formed by the electron beam in fabrication of photomasks for the production of higher densities of silicon microcircuits.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

scholarly journals Fabrication of Ultranarrow Nanochannels with Ultrasmall Nanocomponents in Glass Substrates

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 775
Author(s):  
Hiroki Kamai ◽  
Yan Xu
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Dry Etching ◽  
Dissimilar Material ◽  
Glass Substrates ◽  
Nanofluidic Devices ◽  
Fundamental Research ◽  
Fine Glass ◽  
Physical Phenomena

Nanofluidics is supposed to take advantage of a variety of new physical phenomena and unusual effects at nanoscales typically below 100 nm. However, the current chip-based nanofluidic applications are mostly based on the use of nanochannels with linewidths above 100 nm, due to the restricted ability of the efficient fabrication of nanochannels with narrow linewidths in glass substrates. In this study, we established the fabrication of nanofluidic structures in glass substrates with narrow linewidths of several tens of nanometers by optimizing a nanofabrication process composed of electron-beam lithography and plasma dry etching. Using the optimized process, we achieved the efficient fabrication of fine glass nanochannels with sub-40 nm linewidths, uniform lateral features, and smooth morphologies, in an accurate and precise way. Furthermore, the use of the process allowed the integration of similar or dissimilar material-based ultrasmall nanocomponents in the ultranarrow nanochannels, including arrays of pockets with volumes as less as 42 zeptoliters (zL, 10−21 L) and well-defined gold nanogaps as narrow as 19 nm. We believe that the established nanofabrication process will be very useful for expanding fundamental research and in further improving the applications of nanofluidic devices.

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