Characterization of a reactive broad beam radio-frequency ion source

1988 ◽  
Vol 6 (1) ◽  
pp. 284 ◽  
Author(s):  
R. Lossy
Keyword(s):  
Radio Frequency ◽  
Ion Source ◽  
Broad Beam

scholarly journals Development of a Radio Frequency Coupled Broad Beam Ion Source for Material Processing

2018 ◽  
Vol 0 (0) ◽  
pp. 0-0
Author(s):  
Amin Hassan ◽  
Mohamed Gamal ◽  
Safwat Zakhary ◽  
Lama Osman ◽  
Magda Hanafy
Keyword(s):  
Material Processing ◽  
Radio Frequency ◽  
Ion Source ◽  
Broad Beam

Characterization of a modular broad beam ion source

1998 ◽  
Vol 7 (3) ◽  
pp. 252-267 ◽  
Author(s):  
Michael Zeuner ◽  
Horst Neumann ◽  
Frank Scholze ◽  
Dieter Flamm ◽  
Michael Tartz ◽  
...  
Keyword(s):  
Ion Source ◽  
Broad Beam

scholarly journals Characterization of an RF excited broad beam ion source operating with inert gases

2021 ◽  
Vol 129 (22) ◽  
pp. 223305
Author(s):  
Erik Rohkamm ◽  
Daniel Spemann ◽  
Frank Scholze ◽  
Frank Frost
Keyword(s):  
Ion Source ◽  
Inert Gases ◽  
Broad Beam

Preliminary results of a broad beam radio frequency ion source with electron plasma interaction

1996 ◽  
Vol 67 (3) ◽  
pp. 1365-1367 ◽  
Author(s):  
M. E. Abdelaziz ◽  
S. G. Zakhary ◽  
A. A. Ghanem ◽  
A. M. Abdelghaffar
Keyword(s):  
Radio Frequency ◽  
Electron Plasma ◽  
Ion Source ◽  
Plasma Interaction ◽  
Preliminary Results ◽  
Broad Beam

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

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