Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases

1987 ◽  
Vol 5 (4) ◽  
pp. 1033 ◽  
Author(s):  
Tom Kendelewicz
Keyword(s):  
Schottky Barrier ◽  
Chemical Reaction ◽  
Barrier Formation

Chemical reaction and Schottky-barrier formation at the Ir/Si interface

1987 ◽  
Vol 35 (17) ◽  
pp. 9073-9084 ◽  
Author(s):  
M. Wittmer ◽  
P. Oelhafen ◽  
K. N. Tu
Keyword(s):  
Schottky Barrier ◽  
Chemical Reaction ◽  
Barrier Formation

Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

2008 ◽  
Vol 254 (24) ◽  
pp. 8000-8004 ◽  
Author(s):  
L.J. Brillson ◽  
H.L. Mosbacker ◽  
M.J. Hetzer ◽  
Y. Strzhemechny ◽  
D.C. Look ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Reaction ◽  
Surface Passivation ◽  
Near Surface ◽  
Surfaces And Interfaces ◽  
Barrier Formation

Chemical reaction and Schottky-barrier formation at V/Si interfaces

1984 ◽  
Vol 29 (4) ◽  
pp. 1540-1550 ◽  
Author(s):  
J. G. Clabes ◽  
G. W. Rubloff ◽  
T. Y. Tan
Keyword(s):  
Schottky Barrier ◽  
Chemical Reaction ◽  
Barrier Formation

Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Kendelewicz ◽  
W. G. Petro ◽  
M. D. Williams ◽  
S. H. Pan ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Valence Band ◽  
Chemical Reaction ◽  
Excitation Source ◽  
Nickel Phosphide ◽  
Auger Transition ◽  
Sequential Deposition ◽  
Barrier Formation ◽  
Initial Stage

ABSTRACTThe chemical reaction at the Ni/InP (110) and Ni/GaAs (110) interfaces produced by sequential deposition of thin Ni overlayers onto cleaved semiconductor surfaces has been investigated with valence band (VB) and core level photoemission and Auger spectroscopies using synchrotron radiation as the excitation source. By monitoring changes in the VB, P 2p, In 4d, Ga 3d, As 3d, and Ni 3p photoemission spectra and the lineshape of the P LVV Auger transition during the initial stage of Schottky barrier formation, we found that for both interfaces the first few Å of Ni react strongly with the surface resulting in the formation of a nickel phosphide or nickel arsenide. At the same time, segregation of metallic In or Ga is observed.

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation

1990 ◽  
Vol 41 (2) ◽  
pp. 991-994 ◽  
Author(s):  
M. Vos ◽  
C. M. Aldao ◽  
D. J. W. Aastuen ◽  
J. H. Weaver
Keyword(s):  
Schottky Barrier ◽  
Interface Morphology ◽  
Neutral Atoms ◽  
Barrier Formation

Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces

1990 ◽  
Vol 64 (21) ◽  
pp. 2551-2554 ◽  
Author(s):  
S. Chang ◽  
L. J. Brillson ◽  
Y. J. Kime ◽  
D. S. Rioux ◽  
P. D. Kirchner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation
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