The formation of titanium silicide by arsenic ion beam mixing and rapid thermal annealing

1986 ◽  
Vol 4 (6) ◽  
pp. 1344 ◽  
Author(s):  
R. K. Shukla
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Ion Beam Mixing

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

The Effect of Implant and Rapid Thermal Annealing Temperatures on Ion Beam Mixing of Titanium Silicide

1986 ◽  
Vol 76 ◽  
Author(s):  
G. A. Mattiussi ◽  
J. L. Whitton ◽  
A. A. Naem ◽  
V. Q. Ho
Keyword(s):  
Thin Layer ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Titanium Disilicide ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Different Temperatures ◽  
Higher Doses

ABSTRACTIon beam mixing has been used to form layers of titanium disilicide on Si wafers. Doses of Ge+ up to 1×1016 ions/cm2 were implanted at 140 keV through 51 nm of sputtered Ti. The substrate was held at different temperatures; 150°C, 300°C and 400°C. In addition, some samples were processed without temperature control. Two rapid thermal annealing cycles were used, 800°C for 10 s and 650°C for 50 s in an N2 ambient to form stoichiometric TiSi2. As-implanted samples showed an increase in the number of mixed Ti and Si atoms with higher implant temperature and larger dose. In addition, a thin layer with a Ti/Si ratio of 1:1 as seen in some samples indicating possible TiSi phase formation. Lower implant temperatures, higher doses and higher anneal temperatures all produced greater TiSi2 thicknesses. Ion beam mixing yields thicker. silicide layers than those formed without mixing. The silicide interface smoothness was improved by ion beam mixing although some residual implant damage was observed after annealing. The implanted Ge+ accumulated below the silicide/Si interface and in the surface Ti oxide layer.

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

1988 ◽  
Vol 52 (11) ◽  
pp. 877-879 ◽  
Author(s):  
Y. H. Ku ◽  
S. K. Lee ◽  
D. K. Shih ◽  
D. L. Kwong ◽  
C‐O Lee ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Silicide Growth

Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Dopant Distribution ◽  
Junction Depth ◽  
Ion Beam Mixing ◽  
Sem And Tem ◽  
Shallow Junctions

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

1985 ◽  
Vol 57 (6) ◽  
pp. 1890-1894 ◽  
Author(s):  
B‐Y. Tsaur ◽  
C. K. Chen ◽  
C. H. Anderson ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Silicide Formation ◽  
Ion Beam Mixing ◽  
Tungsten Silicide

Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

1985 ◽  
Vol 47 (7) ◽  
pp. 688-691 ◽  
Author(s):  
D. L. Kwong ◽  
D. C. Meyers ◽  
N. S. Alvi ◽  
L. W. Li ◽  
E. Norbeck
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Refractory Metal ◽  
Ion Beam ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Ion Beam Mixing
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