Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system

1985 ◽  
Vol 3 (2) ◽  
pp. 572 ◽  
Author(s):  
R. Heckingbottom
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

2015 ◽  
Vol 15 (8) ◽  
pp. 4104-4109 ◽  
Author(s):  
Johannes K. Zettler ◽  
Christian Hauswald ◽  
Pierre Corfdir ◽  
Mattia Musolino ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Material Quality ◽  
Gan Nanowires ◽  
Bulk Gan

Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Masanobu Miyao ◽  
Takashi Ohshima ◽  
Nobuo Nakamura ◽  
Kiyokazu Nakagawa
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
High Quality ◽  
Cross Sectional ◽  
New Techniques ◽  
Transmission Microscopy ◽  
Temperature Growth ◽  
Double Heterostructures

AbstractThe formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

2015 ◽  
Vol 333 ◽  
pp. 92-95 ◽  
Author(s):  
A. Del Río-De Santiago ◽  
V.H. Méndez-García ◽  
I. Martínez-Velis ◽  
Y.L. Casallas-Moreno ◽  
E. López-Luna ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Nanostructure Formation ◽  
Mn Doped

High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure

2000 ◽  
Vol 87 (9) ◽  
pp. 4249-4253 ◽  
Author(s):  
K. Ichino ◽  
K. Ueyama ◽  
M. Yamamoto ◽  
H. Kariya ◽  
H. Miyata ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth
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