Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
1985 ◽
Vol 3
(4)
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pp. 947
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2001 ◽
Vol 227-228
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pp. 1089-1094
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2016 ◽
Vol 685
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pp. 370-375
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2007 ◽
Vol 301-302
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pp. 529-533
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1995 ◽
Vol 150
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pp. 574-578
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