Compound sputtering cathodes of refractory metal silicides and thin film produced

1985 ◽  
Vol 3 (6) ◽  
pp. 1692 ◽  
Author(s):  
Hung-Lee Hoo
Keyword(s):  
Thin Film ◽  
Refractory Metal ◽  
Metal Silicides

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Thermodynamic study on refractory metal silicides

2005 ◽  
Vol 66 (2-4) ◽  
pp. 298-302 ◽  
Author(s):  
Hiroyasu Fujiwara ◽  
Yukitomi Ueda ◽  
Alok Awasthi ◽  
Nagaiyar Krishnamurthy ◽  
Sheo Parkash Garg
Keyword(s):  
Refractory Metal ◽  
Thermodynamic Study ◽  
Metal Silicides

Ordering transformations in the M 3 Si refractory metal silicides

1997 ◽  
Vol 37 (6) ◽  
pp. 793-800 ◽  
Author(s):  
Mohammad Saqib ◽  
Isaac Weiss
Keyword(s):  
Refractory Metal ◽  
Metal Silicides

Refractory metal silicides reinforced by in-situ formed Nb2O5 fibers and mullite nanoclusters

2017 ◽  
Vol 43 (18) ◽  
pp. 16362-16370 ◽  
Author(s):  
Jing-Lian Fan ◽  
Qiong Lu ◽  
Pei-Zhong Feng ◽  
Wei Li
Keyword(s):  
Refractory Metal ◽  
Metal Silicides
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