Thin film transistors for large area electronics

1984 ◽  
Vol 2 (4) ◽  
pp. 827 ◽  
Author(s):  
Malcolm J. Thompson
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Area ◽  
Large Area Electronics

Large Area Electronics for Flat Panel Imagers Progress and Challenges

2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
And Performance ◽  
Flat Panel Imagers ◽  
Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics

2017 ◽  
Vol 64 (5) ◽  
pp. 2030-2037 ◽  
Author(s):  
Jiaqing Zhao ◽  
Pengfei Yu ◽  
Shi Qiu ◽  
Qinghang Zhao ◽  
Linrun Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Circuit Simulation ◽  
Low Cost ◽  
Compact Model ◽  
Large Area ◽  
Large Area Electronics

Fabrication of organic thin-film transistors by spray-deposition for low-cost, large-area electronics

2010 ◽  
Vol 11 (12) ◽  
pp. 1960-1965 ◽  
Author(s):  
Natalia A. Azarova ◽  
Jack W. Owen ◽  
Claire A. McLellan ◽  
Marsha A. Grimminger ◽  
Eric K. Chapman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Spray Deposition ◽  
Low Cost ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Large Area ◽  
Large Area Electronics

A Review on the Recent Advancements in Tin Oxide-Based Thin-Film Transistors for Large-Area Electronics

2020 ◽  
Vol 49 (12) ◽  
pp. 7098-7111
Author(s):  
K. Jenifer ◽  
S. Arulkumar ◽  
S. Parthiban ◽  
J. Y. Kwon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Large Area ◽  
Large Area Electronics

NANOCRYSTALLINE SILICON THIN FILM TRANSISTORS FOR HIGH PERFORMANCE LARGE AREA ELECTRONICS

2008 ◽  
Vol 18 (04) ◽  
pp. 1055-1068
Author(s):  
MOHAMMAD R. ESMAEILI-RAD ◽  
HYUN JUNG LEE ◽  
ANDREI SAZONOV ◽  
AROKIA NATHAN
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Nanocrystalline Silicon ◽  
Large Area ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Readout Circuits ◽  
Large Area Electronics

Nanocrystalline silicon ( nc - Si ) thin film transistors (TFTs) have potential for high-performance applications in large area electronics, such as next generation of flat panel displays and medical x-ray imagers, for pixel drivers, readout circuits, as well as complementary channel logic circuits for system-on-panel integration. This potential stems from reduced threshold voltage shift and higher transconductance, compared to amorphous silicon counterpart. In this paper, we discuss various TFT structures, their associated design and performance considerations, including leakage current and threshold voltage stability mechanisms.

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel

2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Single Layer ◽  
Channel Structure ◽  
Gate Insulator ◽  
Large Area ◽  
Threshold Voltage Shift ◽  
High Carrier

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

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