Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

2000 ◽  
Vol 18 (1) ◽  
pp. 261-267 ◽  
Author(s):  
Qin-Sheng Zhu ◽  
H. Nagai ◽  
Y. Kawaguchi ◽  
K. Hiramatsu ◽  
N. Sawaki
Keyword(s):  
Thermal Annealing ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hole Trap ◽  
Mg Doped ◽  
Trap Levels

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (14) ◽  
pp. 2024-2026 ◽  
Author(s):  
H. Nagai ◽  
Q. S. Zhu ◽  
Y. Kawaguchi ◽  
K. Hiramatsu ◽  
N. Sawaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hole Trap ◽  
Mg Doped ◽  
Trap Levels

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 312 (21) ◽  
pp. 3131-3135 ◽  
Author(s):  
Daisuke Iida ◽  
Kenta Tamura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Compensation Effect ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates

1994 ◽  
Vol 145 (1-4) ◽  
pp. 192-196 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
N. Sawaki ◽  
I. Akasaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

2014 ◽  
Vol 104 (5) ◽  
pp. 051915 ◽  
Author(s):  
T. W. Kim ◽  
K. Kim ◽  
J. J. Lee ◽  
T. F. Kuech ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 298 ◽  
pp. 150-153 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Fumihiro Nakajima ◽  
Nobuhiro Nakadan ◽  
Tokuharu Kimura ◽  
Ryuji Katayama ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 65 (5) ◽  
pp. 593-594 ◽  
Author(s):  
T. Tanaka ◽  
A. Watanabe ◽  
H. Amano ◽  
Y. Kobayashi ◽  
I. Akasaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type ◽  
Type Conduction ◽  
Mg Doped
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