Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma

1999 ◽  
Vol 17 (4) ◽  
pp. 1174-1181 ◽  
Author(s):  
J. Etrillard ◽  
J. F. Bresse ◽  
C. Daguet ◽  
M. Riet ◽  
J. Mba
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Inductively Coupled

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

scholarly journals III-nitride dry etching: Comparison of inductively coupled plasma chemistries

1999 ◽  
Vol 17 (4) ◽  
pp. 2202-2208 ◽  
Author(s):  
H. Cho ◽  
Y.-B. Hahn ◽  
D. C. Hays ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

scholarly journals 300°C GaN/AlGaN Heterojunction Bipolar Transistor

1998 ◽  
Vol 3 ◽  
Author(s):  
Fan Ren ◽  
Cammy R. Abernathy ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
R. Hickman ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Hole Concentration ◽  
Dry Etching ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Resistance

A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.

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