Study on surface reaction of (Ba, Sr)TiO3 thin films by high density plasma etching

1999 ◽  
Vol 17 (4) ◽  
pp. 2156-2161 ◽  
Author(s):  
Seung-Bum Kim ◽  
Chang-Il Kim ◽  
Eui-Goo Chang ◽  
Geun-Young Yeom
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Surface Reaction ◽  
High Density ◽  
Density Plasma

Nanometer-sized patterning of polysilicon thin films by high density plasma etching

2004 ◽  
Vol 467 (1-2) ◽  
pp. 172-175 ◽  
Author(s):  
Young Soo Song ◽  
Jung Woo Kim ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Density Plasma

HIGH DENSITY PLASMA ETCHING OF IrRu THIN FILMS AS A NEW ELECTRODE FOR FeRAM

2006 ◽  
Vol 84 (1) ◽  
pp. 169-177
Author(s):  
JANG WOO LEE ◽  
SU RYUN MIN ◽  
HAN NA CHO ◽  
CHEE WON CHUNG
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Density Plasma

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
A Srivastava ◽  
D. Kumar ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Single Layer ◽  
Dry Etching ◽  
High Density ◽  
Pattern Transfer ◽  
Removal Rates ◽  
Etch Rates ◽  
Density Plasma ◽  
Maximum Removal

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

High-Density Plasma Etching of Iridium Thin Films in a Cl[sub 2]/O[sub 2]/Ar Plasma

2003 ◽  
Vol 150 (5) ◽  
pp. G297 ◽  
Author(s):  
Chee Won Chung ◽  
Hye In Kim ◽  
Young Soo Song
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Ar Plasma ◽  
Density Plasma

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma
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