Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

1999 ◽  
Vol 17 (2) ◽  
pp. 354-362 ◽  
Author(s):  
H. Kim ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Film Growth ◽  
Hydrogen Desorption ◽  
Gas Source

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

1997 ◽  
Vol 82 (5) ◽  
pp. 2288-2297 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
T. Spila ◽  
N. Taylor ◽  
S. Y. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Film Growth ◽  
Gas Source

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

1997 ◽  
Vol 392 (1-3) ◽  
pp. L63-L68 ◽  
Author(s):  
G. Glass ◽  
H. Kim ◽  
M.R. Sardela ◽  
Q. Lu ◽  
J.R.A. Carlsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Dangling Bond ◽  
Gas Source ◽  
B Doping

Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

2000 ◽  
Vol 88 (12) ◽  
pp. 7067-7078 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
P. Desjardins ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Arsenic Incorporation

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

2008 ◽  
Vol 103 (12) ◽  
pp. 123530 ◽  
Author(s):  
B. Cho ◽  
J. Bareño ◽  
Y. L. Foo ◽  
S. Hong ◽  
T. Spila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source

Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

2001 ◽  
Vol 79 (20) ◽  
pp. 3263-3265 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
Y. L. Foo ◽  
P. Desjardins ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

2000 ◽  
Vol 76 (20) ◽  
pp. 2853-2855 ◽  
Author(s):  
N. Taylor ◽  
H. Kim ◽  
P. Desjardins ◽  
Y. L. Foo ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source
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