Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis

1998 ◽  
Vol 16 (4) ◽  
pp. 2528-2538 ◽  
Author(s):  
V. L. Berkovits ◽  
V. P. Ulin ◽  
D. Paget ◽  
J. E. Bonnet ◽  
T. V. L’vova ◽  
...  
1983 ◽  
Vol 8 (1-2) ◽  
pp. 189-193 ◽  
Author(s):  
M. Saint Jean ◽  
M. Menant ◽  
Nguyen Hy Hau ◽  
C. Rigaux ◽  
A. Metrot

2018 ◽  
Vol 6 (8) ◽  
pp. 1701043 ◽  
Author(s):  
Jingyi Zhao ◽  
Zhengmin Cao ◽  
Yuqing Cheng ◽  
Jianning Xu ◽  
Te Wen ◽  
...  
Keyword(s):  

2012 ◽  
Vol 116 (34) ◽  
pp. 18222-18229 ◽  
Author(s):  
Francisco Gallego-Gómez ◽  
Alvaro Blanco ◽  
Cefe López

1986 ◽  
Vol 75 ◽  
Author(s):  
T. F. Heinz ◽  
M. M. T. Loy ◽  
S. S. Iyer

AbstractThe applicability of the nonlinear optical technique of surface second-harmonic generation to in-situ studies of epitaxial and non-epitaxial crystal growth of centrosymmetric materials is demonstrated. In measurements of the deposition of atomic Si on Si(111)-7×7 surfaces, the (anisotropic) second-harmonic response is seen to be sensitive to the ordering of fractional monolayers of adatoms. For deposition on a substrate held at room temperature, the second-harmonic data are consistent with the formation of a disordered adlayer on top of the original reconstructed surface. The results of real-time measurements of the thermal annealing of disordered Si adlayers of monolayer thickness are also presented.


2018 ◽  
Vol 558 ◽  
pp. 81-90 ◽  
Author(s):  
T.N. Filippov ◽  
D.A. Svintsitskiy ◽  
I.A. Chetyrin ◽  
I.P. Prosvirin ◽  
D.S. Selishchev ◽  
...  

2005 ◽  
Vol 482 (1-2) ◽  
pp. 50-55 ◽  
Author(s):  
P. Bruno ◽  
F. Bénédic ◽  
F. Mohasseb ◽  
F. Silva ◽  
K. Hassouni

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