Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

1998 ◽  
Vol 16 (4) ◽  
pp. 2140-2147 ◽  
Author(s):  
K. Yasutake ◽  
A. Takeuchi ◽  
H. Kakiuchi ◽  
K. Yoshii
Keyword(s):  
Radio Frequency ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Molecular Beam Epitaxial ◽  
Frequency Plasma ◽  
Crystalline Films ◽  
Molecular Beam Epitaxial Growth ◽  
Nitrogen Radical

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

scholarly journals Molecular Beam Epitaxial Growth of the Single Crystalline ZnO Films on Silicon Substrates.

Shinku ◽  
2002 ◽  
Vol 45 (3) ◽  
pp. 301-304
Author(s):  
Kazuto KOIKE ◽  
Takanori TANITE ◽  
Takayoshi HONDEN ◽  
Hi-izu OCHI ◽  
Shigehiko SASA ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Zno Films ◽  
Silicon Substrates ◽  
Single Crystalline ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

scholarly journals Molecular Beam Epitaxial Growth of Single-Crystalline ZnO Films on a-Plane Sapphire Substrates

2003 ◽  
Vol 52 (12) ◽  
pp. 1414-1419 ◽  
Author(s):  
Kazuto KOIKE ◽  
Tomonori KOMURO ◽  
Feng-Ping YAN ◽  
Ken-ichi OGATA ◽  
Shigehiko SASA ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Zno Films ◽  
Single Crystalline ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document