In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)

1998 ◽  
Vol 16 (3) ◽  
pp. 1938-1943 ◽  
Author(s):  
I. Goldfarb ◽  
J. H. G. Owen ◽  
D. R. Bowler ◽  
C. M. Goringe ◽  
P. T. Hayden ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Observation ◽  
Gas Source ◽  
Silicon And Germanium

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

1997 ◽  
Vol 7 (5) ◽  
pp. 215-224
Author(s):  
B. A. Joyce ◽  
J. Zhang ◽  
A. G. Taylor ◽  
M. H. Xie ◽  
J. M. Fernández ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Silicon ◽  
In Situ Studies ◽  
Gas Source ◽  
Silicon Growth

Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

1999 ◽  
Vol 581 ◽  
Author(s):  
F. Edelman ◽  
F. Börner ◽  
R. Krause-Rehrberg ◽  
P. Werner ◽  
R. Weil ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Solid Solutions ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Molecular Beam ◽  
Doppler Broadening ◽  
Boron Doped ◽  
Silicon And Germanium

ABSTRACTThe crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

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