Postdeposition reduction of noble metal doped ZnO films

1998 ◽  
Vol 16 (3) ◽  
pp. 1926-1933 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Aimee Rose ◽  
Li Qiong Wang ◽  
Charles F. Windisch
Keyword(s):  
Noble Metal ◽  
Zno Films ◽  
Doped Zno ◽  
Metal Doped

Structural and magnetic properties of transition metal doped ZnO films

2010 ◽  
Vol 518 (8) ◽  
pp. 2152-2156 ◽  
Author(s):  
C.G. Jin ◽  
Y.Gao ◽  
X.M. Wu ◽  
M.L. Cui ◽  
L.J. Zhuge ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Transition Metal ◽  
Zno Films ◽  
Structural And Magnetic Properties ◽  
Doped Zno ◽  
Metal Doped

Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films

2006 ◽  
Vol 515 (4) ◽  
pp. 2549-2554 ◽  
Author(s):  
Qingyu Xu ◽  
Lars Hartmann ◽  
Heidemarie Schmidt ◽  
Holger Hochmuth ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Transition Metal ◽  
Pulsed Laser ◽  
Zno Films ◽  
Doped Zno ◽  
Metal Doped

ChemInform Abstract: Ferromagnetism and Possible Application in Spintronics of Transition-Metal-Doped ZnO Films

ChemInform ◽  
2009 ◽  
Vol 40 (9) ◽  
Author(s):  
F. Pan ◽  
C. Song ◽  
X. J. Liu ◽  
Y. C. Yang ◽  
F. Zeng
Keyword(s):  
Transition Metal ◽  
Zno Films ◽  
Doped Zno ◽  
Metal Doped

scholarly journals Light irradiation effect on the gas response of pure and noble-metal-doped ZnO sensors

2020 ◽  
Vol 1492 ◽  
pp. 012051
Author(s):  
G Atanasova ◽  
T Dilova ◽  
A Og Dikovska ◽  
N N Nedyalkov
Keyword(s):  
Noble Metal ◽  
Light Irradiation ◽  
Irradiation Effect ◽  
Doped Zno ◽  
Metal Doped ◽  
Gas Response

Multiferroic and Piezoelectric Behavior of Transition-Metal Doped ZnO Films

2009 ◽  
Vol 620-622 ◽  
pp. 735-740 ◽  
Author(s):  
Feng Pan ◽  
Xue Jing Liu ◽  
Yu Chao Yang ◽  
Cheng Song ◽  
Fei Zeng
Keyword(s):  
Transition Metal ◽  
Doping Concentration ◽  
Magnetic Moments ◽  
Zno Films ◽  
Doped Zno ◽  
Metal Doped ◽  
Piezoelectric Behavior ◽  
Piezoelectric Devices ◽  
Giant Magnetic Moment ◽  
Co Doped

In this paper, we report the multiferroic and piezoelectric behavior observed in transition-metal doped ZnO films. The experimental results indicated that the Co-doped ZnO films deposited by magnetron sputtering possess a Curie temperature higher than 700K, and the magnetic moments of Co are intimatedly correlated to the doping concentration and the substrate. A giant magnetic moment of 6.1 B/Co is observed in (4 at.%) Co-doped ZnO films. Ferroelectric and ferromagnetic behaviors simultaneously were also obtained in V and Cr doped ZnO films on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method, revealing a multiferroic nature. The high piezoelectric d33 coefficient 80-120 pm/V has also been achieved by Cr and V substitutions, which could make Cr-doped or V-doped ZnO a promising material in piezoelectric devices.

scholarly journals Improving the Room-Temperature Ferromagnetism in ZnO and Low-Doped ZnO:Ag Films Using GLAD Sputtering

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5337
Author(s):  
Marcio A. Correa ◽  
Armando Ferreira ◽  
Raphael M. Tromer ◽  
Leonardo D. Machado ◽  
Matheus Gamino ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Ferromagnetic Metal ◽  
Zno Films ◽  
Ferromagnetic Behavior ◽  
Sensor Element ◽  
Promising Candidate ◽  
Doped Zno ◽  
Metal Doped

ZnO and doped ZnO films with non-ferromagnetic metal have been widely used as biosensor elements. In these studies, the electrochemical measurements are explored, though the electrical impedance of the system. In this sense, the ferromagnetic properties of the material can be used for multifunctionalization of the sensor element using external magnetic fields during the measurements. Within this context, we investigate the room-temperature ferromagnetism in pure ZnO and Ag-doped ZnO films presenting zigzag-like columnar geometry. Specifically, we focus on the films’ structural and quasi-static magnetic properties and disclose that they evolve with the doping of low-Ag concentrations and the columnar geometry employed during the deposition. The magnetic characterization reveals ferromagnetic behavior at room temperature for all studied samples, including the pure ZnO one. By considering computational simulations, we address the origin of ferromagnetism in ZnO and Ag-doped ZnO and interpret our results in terms of the Zn vacancy dynamics, its substitution by an Ag atom in the site, and the influence of the columnar geometry on the magnetic properties of the films. Our findings bring to light an exciting way to induce/explore the room-temperature ferromagnetism of a non-ferromagnetic metal-doped semiconductor as a promising candidate for biosensor applications.

Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering

2008 ◽  
Vol 5 (9) ◽  
pp. 3125-3127 ◽  
Author(s):  
K. Yamaoka ◽  
Y. Terai ◽  
T. Yamaguchi ◽  
Y. Fujiwara
Keyword(s):  
Transition Metal ◽  
Rf Sputtering ◽  
Zno Films ◽  
Plasma Enhanced Cvd ◽  
Doped Zno ◽  
Metal Doped

Giant magnetoresistance in transition-metal-doped ZnO films

2006 ◽  
Vol 88 (25) ◽  
pp. 252110 ◽  
Author(s):  
Jing Wang ◽  
Zhengbin Gu ◽  
Minghui Lu ◽  
Di Wu ◽  
Changsheng Yuan ◽  
...  
Keyword(s):  
Transition Metal ◽  
Giant Magnetoresistance ◽  
Zno Films ◽  
Doped Zno ◽  
Metal Doped

METAL-DOPED ZnO THIN FILMS: SYNTHESIS, ETCHING CHARACTERISTIC, AND APPLICATION TEST FOR ORGANIC LIGHT EMITTING DIODE (OLED) DEVICES

2010 ◽  
Vol 17 (01) ◽  
pp. 121-127 ◽  
Author(s):  
SANG-HUN NAM ◽  
MYOUNG-HWA KIM ◽  
DONG GEUN YOO ◽  
SEONG HUN JEONG ◽  
DOO YONG KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Light Emitting Diode ◽  
Etching Rate ◽  
Rf Magnetron Sputtering ◽  
High Resistivity ◽  
Zno Films ◽  
Li Doping ◽  
Doped Zno ◽  
Metal Doped

Metal-doped ZnO films with various metal contents ( Al , Ag and Li of 0–10 wt.%) were prepared by RF magnetron sputtering system with specially designed ZnO targets. The structural, optical and electrical properties of MZO films depended on the type and content of doping in target. Electrical resistivity of LZO thin films increased with increasing Li doping amounts between 0 and 4 wt.%, suggesting that an epitaxial LZO film has high resistivity. We observed morphology in pure ZnO films by using different etchant. In addition, etching rate were contrasted with the etchant concentration and pH. The etching rate is proportional exponentially to pH value. These data will be the technical basis for TCO application. Also, the dry etching rate decreased with increasing the Cl 2 concentration in CH 4/ H 2/ Ar + additive Cl 2 gas mixture but metal dopants were etched effectively.

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