Quantum well states in high-quality Cu films deposited on Co (100): A high resolution photoemission study

1998 ◽  
Vol 16 (3) ◽  
pp. 1368-1373 ◽  
Author(s):  
P. Segovia ◽  
E. G. Michel ◽  
J. E. Ortega
1999 ◽  
Vol 203 (1-3) ◽  
pp. 126-128 ◽  
Author(s):  
J.E. Ortega ◽  
A. Närmann ◽  
K.N. Altmann ◽  
W. O'Brien ◽  
D.J. Seo ◽  
...  

1999 ◽  
Vol 60 (12) ◽  
pp. 8748-8752 ◽  
Author(s):  
Kazutoshi Takahashi ◽  
Akinori Tanaka ◽  
Hiroyuki Sasaki ◽  
Wakako Gondo ◽  
Shoji Suzuki ◽  
...  

1987 ◽  
Vol 94 ◽  
Author(s):  
A. L. Wachs ◽  
T. Miller ◽  
A. P. Shapiro ◽  
T. -C. Chiang

ABSTRACTWe present electron diffraction, and high-resolution angle-resolved and angle-integrated photoemission studies of the initial phases of adsorption and growth of Ag on Ge(111). The results provide information on the structural properties of the Ge(111)-c(2×8) substrate surface, show Ag grows upon it almost laminarly at room temperature, and unambiguously demonstrate the presence of a small amount of Ge segregating on top of the growing Ag overlayer. The origins and behavior of these segregated atoms are discussed. Ag films more than a few monolayers thick exhibit quantum well states which are observed to evolve as a function of film thickness.


1993 ◽  
Vol 313 ◽  
Author(s):  
P.D. Johnson ◽  
N.B. Brookes ◽  
Y. Chang ◽  
K. Garrison

ABSTRACTSpin polarized photoemission is used to study the electronic structure of noble metals deposited on ferromagnetic substrates. Studies of Ag deposited on an Fe (001) substrate reveal a series of minority spin interface or quantum well states with binding energies dependent on the thickness of the silver. Similar behavior is observed for Cu films deposited on a fee Co (001) substrate. Tight-binding Modeling reproduces many of the observations and shows that hybridization of the sp-bands with the noble metal d-bands cannot be ignored.


1998 ◽  
Vol 05 (01) ◽  
pp. 299-303 ◽  
Author(s):  
C. Wigren ◽  
L. Ilver ◽  
J. Kanski ◽  
P. O. Nilsson ◽  
U. O. Karlsson

Quantum well states in very thin epitaxial ErAs layers on GaAs(100) have been found in angle-resolved photoelectron spectra. From the dispersive properties of the quantum well states effective masses are obtained representing electron motion parallel to the surface layers and orthogonal to the layers.


Author(s):  
A. V. Crewe ◽  
J. Wall ◽  
L. M. Welter

A scanning microscope using a field emission source has been described elsewhere. This microscope has now been improved by replacing the single magnetic lens with a high quality lens of the type described by Ruska. This lens has a focal length of 1 mm and a spherical aberration coefficient of 0.5 mm. The final spot size, and therefore the microscope resolution, is limited by the aberration of this lens to about 6 Å.The lens has been constructed very carefully, maintaining a tolerance of + 1 μ on all critical surfaces. The gun is prealigned on the lens to form a compact unit. The only mechanical adjustments are those which control the specimen and the tip positions. The microscope can be used in two modes. With the lens off and the gun focused on the specimen, the resolution is 250 Å over an undistorted field of view of 2 mm. With the lens on,the resolution is 20 Å or better over a field of view of 40 microns. The magnification can be accurately varied by attenuating the raster current.


1996 ◽  
Vol 6 (11) ◽  
pp. 1461-1467 ◽  
Author(s):  
C. Sommers ◽  
P. M. Levy

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