Erratum: Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam [J. Vac. Sci. Technol. A 14, 2361 (1996)]

1997 ◽  
Vol 15 (4) ◽  
pp. 2456-2456
Author(s):  
Kiyohisa Fujinaga
Keyword(s):  
Mass Spectrometry ◽  
Alloy Composition ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Relative Sensitivity ◽  
Sige Alloy ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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