Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A

1997 ◽  
Vol 15 (3) ◽  
pp. 915-918 ◽  
Author(s):  
J. G. Belk ◽  
J. L. Sudijono ◽  
H. Yamaguchi ◽  
X. M. Zhang ◽  
D. W. Pashley ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Strain Relaxation ◽  
Scanning Tunneling ◽  
Misfit Dislocations ◽  
Tunneling Microscopy

Surface evolution of strained SrRuO3 films deposited at various temperatures on SrTiO3 (001) substrates

2006 ◽  
Vol 21 (6) ◽  
pp. 1550-1560 ◽  
Author(s):  
Sang Ho Oh ◽  
Chan Gyung Park
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Strain Relaxation ◽  
Scanning Tunneling ◽  
Misfit Dislocations ◽  
Ion Beam Sputtering ◽  
Ambient Conditions ◽  
Tunneling Microscopy ◽  
Surface Evolution ◽  
Relaxation Stage

Surface evolution was studied for strained SrRuO3 films with a nominal 75 nm thickness deposited at various substrate temperatures (650–850 °C). Epitaxial growth of the films was achieved on single TiO2-terminated SrTiO3 (001) substrates by using ion-beam sputtering. The surface morphology of the deposited films was investigated by scanning tunneling microscopy in ambient conditions, and their microstructure was characterized by transmission electron microscopy. The self-organized step-terrace structure was observed for the films deposited at lower than 800 °C, suggesting that the epitaxial growth proceeded by step-flow growth. In particular, each film showed characteristic surface evolutions pertinent to the misfit strain relaxation stage, mostly influenced by the moving segment of misfit dislocations threading up to the surface: surface undulations for the film at the initial stage of relaxation (deposited at 650 °C), circular growth spirals during the relaxation stage (700 °C), and well-ordered step-terrace structure after almost full development of misfit dislocations (750 and 800 °C).

Evolution of Stress and Relaxation of Strain of Ge and SiGe Alloy Films on Si(001)

2001 ◽  
Vol 696 ◽  
Author(s):  
R. Koch ◽  
J. J. Schulz ◽  
B. Wassermann ◽  
G. Wedler
Keyword(s):  
Strain Relaxation ◽  
Misfit Strain ◽  
Growth Mode ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
Misfit Dislocations ◽  
Tunneling Microscopy ◽  
Structural Investigations ◽  
Alloy Films ◽  
Sige Alloy

AbstractWe report on real time stress measurements by a sensitive cantilever beam technique of Ge and SiGe Alloy Films on Si(001) in combination with structural investigations by in situ STM (scanning tunneling microscopy) and ex situ AFM (atomic force microscopy). Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain as well as the respective growth mode. For the Stranski-Krastanow system Ge/Si(001) the strain relaxation proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. Co-deposition of Si influences the stress behavior drastically. The growth mode changes from Stranski-Krastanow to a kinetic 3D island mode at Si concentrations of about 20% leading to the so far smallest quantum dots of the Ge/Si system.

Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopy

1991 ◽  
Vol 59 (16) ◽  
pp. 1960-1962 ◽  
Author(s):  
Roland Stalder ◽  
Henning Sirringhaus ◽  
Nico Onda ◽  
Hans von Känel
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Misfit Dislocations ◽  
Tunneling Microscopy

Al Induced Reconstructions on the Si(111) Surfaces Studied by Scanning Tunneling Microscopy

1992 ◽  
Vol 295 ◽  
Author(s):  
Masamichi Yoshimura ◽  
Katsuya Takaoka ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Unit Cell ◽  
Incommensurate Phase ◽  
Scanning Tunneling ◽  
Misfit Dislocations ◽  
Dangling Bond ◽  
Tunneling Microscopy ◽  
Stm Images ◽  
Incommensurate Phases

AbstractThe atomic arrangements of the α-7×7 phase and incommensurate phases of Al adsorbed Si(111) surface are investigated respectively by scanning tunneling microscopy (STM). STM images of α-7×7 surface reveal that characteristic triangular structures consisting of three Al adatoms situated on the center part of each half unit cell. The three Al adatoms form a triangular cluster and are bonded to the center adatoms. In this situation, the dangling bond of the center adatom is saturated, which would modify its electronic structure into non-metallic. The incommensurate phase is consists of approximately 9×9 structures, which are separated each other with misfit dislocations. In the “9×9” structure, individual Al atom is visible arranged in threefold symmetry.

A study on α-RuCl3 crystal structure by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 30-31
Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele
Keyword(s):  
Crystal Structure ◽  
Density Distribution ◽  
Scanning Tunneling Microscopy ◽  
Electron Density ◽  
Structure Determination ◽  
Electron Density Distribution ◽  
Scanning Tunneling ◽  
Monoclinic Space Group ◽  
Tunneling Microscopy ◽  
X Ray

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.

Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 22-23
Author(s):  
I. H. Musselman ◽  
R.-T. Chen ◽  
P. E. Russell
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Nonlinear Optical ◽  
Polymer Surface ◽  
Light Extinction ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Optical Polymer ◽  
Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

Practical applications of scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 18-19
Author(s):  
D. R. Denley
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Quantitative Information ◽  
Digital Data ◽  
Scanning Tunneling ◽  
Ambient Atmosphere ◽  
Tunneling Microscopy ◽  
Clear Trend ◽  
Practical Applications ◽  
Promising Tool

Scanning tunneling microscopy (STM) has recently been introduced as a promising tool for analyzing surface atomic structure. We have used STM for its extremely high resolution (especially the direction normal to surfaces) and its ability for imaging in ambient atmosphere. We have examined surfaces of metals, semiconductors, and molecules deposited on these materials to achieve atomic resolution in favorable cases.When the high resolution capability is coupled with digital data acquisition, it is simple to get quantitative information on surface texture. This is illustrated for the measurement of surface roughness of evaporated gold films as a function of deposition temperature and annealing time in Figure 1. These results show a clear trend for which the roughness, as well as the experimental deviance of the roughness is found to be minimal for evaporation at 300°C. It is also possible to contrast different measures of roughness.

Scanning tunneling microscopy of polymers: A status report

1989 ◽  
Vol 47 ◽  
pp. 330-331
Author(s):  
P.E. Russell ◽  
I.H. Musselman
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Sample Surface ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Status Report ◽  
Tunneling Microscopy ◽  
Research Issues ◽  
Wide Range

Scanning tunneling microscopy (STM) has evolved rapidly in the past few years. Major developments have occurred in instrumentation, theory, and in a wide range of applications. In this paper, an overview of the application of STM and related techniques to polymers will be given, followed by a discussion of current research issues and prospects for future developments. The application of STM to polymers can be conveniently divided into the following subject areas: atomic scale imaging of uncoated polymer structures; topographic imaging and metrology of man-made polymer structures; and modification of polymer structures. Since many polymers are poor electrical conductors and hence unsuitable for use as a tunneling electrode, the related atomic force microscopy (AFM) technique which is capable of imaging both conductors and insulators has also been applied to polymers.The STM is well known for its high resolution capabilities in the x, y and z axes (Å in x andy and sub-Å in z). In addition to high resolution capabilities, the STM technique provides true three dimensional information in the constant current mode. In this mode, the STM tip is held at a fixed tunneling current (and a fixed bias voltage) and hence a fixed height above the sample surface while scanning across the sample surface.

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