High-resolution algorithm for quantitative elemental depth profiling by angle-resolved x-ray photoelectron spectroscopy

1997 ◽  
Vol 15 (4) ◽  
pp. 2122-2133 ◽  
Author(s):  
John M. Williams ◽  
Thomas P. Beebe
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray ◽  
Resolution Algorithm ◽  
Elemental Depth

scholarly journals High resolution depth profiling using near-total-reflection hard x-ray photoelectron spectroscopy

2021 ◽  
Vol 39 (6) ◽  
pp. 060802
Author(s):  
Julien E. Rault ◽  
Cheng-Tai Kuo ◽  
Henrique P. Martins ◽  
Giuseppina Conti ◽  
Slavomír Nemšák
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Total Reflection ◽  
X Ray

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

scholarly journals Depth Profiling of the Chemical Composition of Free-Standing Carbon Dots Using X-ray Photoelectron Spectroscopy

2018 ◽  
Vol 122 (26) ◽  
pp. 14889-14897 ◽  
Author(s):  
Irene Papagiannouli ◽  
Minna Patanen ◽  
Valérie Blanchet ◽  
John D. Bozek ◽  
Manuel de Anda Villa ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
Depth Profiling ◽  
Free Standing ◽  
X Ray

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

2019 ◽  
Vol 963 ◽  
pp. 226-229
Author(s):  
Kidist Moges ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Annealing Duration ◽  
Nanometer Scale ◽  
Pure Nitrogen ◽  
X Ray ◽  
Initial Stage

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

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