Determination of diamond growth rate in a flow tube geometry as a function of measured atomic hydrogen density

1996 ◽  
Vol 14 (3) ◽  
pp. 1938-1942 ◽  
Author(s):  
W. L. Gardner
Keyword(s):  
Growth Rate ◽  
Atomic Hydrogen ◽  
Diamond Growth ◽  
Flow Tube ◽  
Hydrogen Density ◽  
Tube Geometry

Determination of atomic hydrogen density with catalytic probes

Vacuum ◽  
1994 ◽  
Vol 45 (10-11) ◽  
pp. 1095-1097 ◽  
Author(s):  
M Mozetič ◽  
M Kveder ◽  
M Drobnič ◽  
A Paulin ◽  
A Zalar
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Density

Determination of atomic hydrogen density in non-thermal hydrogen plasmas via emission actinometry

2007 ◽  
Vol 40 (14) ◽  
pp. 4185-4191 ◽  
Author(s):  
Wei-Guo Wang ◽  
Yong Xu ◽  
Zi-Cai Geng ◽  
Zhong-Wei Liu ◽  
Ai-Min Zhu
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Density ◽  
Hydrogen Plasmas

Growth of Diamond from Sputtered Atomic Carbon and Atomic Hydrogen

1992 ◽  
Vol 270 ◽  
Author(s):  
Darin S. Olson ◽  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Stig B. Hagstrom
Keyword(s):  
Growth Rate ◽  
Atomic Hydrogen ◽  
Surface Reaction ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Diamond Films ◽  
Diamond Growth ◽  
Graphite Target ◽  
Hydrogen Flux ◽  
Deposited Film

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The substrate was exposed to a bombardment of sputtered carbon atoms from a graphite target in a helium DC glow discharge, and subsequently exposed to atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. Deposited film quality, and growth rate are presented as a function of carbon flux, and atomic hydrogen flux. The observed increase in growth rate with atomic hydrogen indicates that a surface reaction mechanism may be responsible for growth. The saturation of the utilization of carbon confirms that the diamond growth is probably a surface reaction. Based on this work we propose that the growth of diamond films in the sequential CVD reactor is most likely governed by surface reactions, and that the necessity of gas phase precursors can be precluded.

Determination of Atomic Hydrogen Density by Lyman-Alpha Laser Fluorescence Spectroscopy

1985 ◽  
Vol 24 (Part 1, No. 7) ◽  
pp. 870-874 ◽  
Author(s):  
Toshinori Kajiwara ◽  
Masayuki Inoue ◽  
Tatsuo Okada ◽  
Mitsuo Maeda ◽  
Katsunori Muraoka ◽  
...  
Keyword(s):  
Fluorescence Spectroscopy ◽  
Atomic Hydrogen ◽  
Laser Fluorescence ◽  
Lyman Alpha ◽  
Hydrogen Density ◽  
Laser Fluorescence Spectroscopy

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

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