Atomic hydrogen adsorption on Si(100)‐(2×1) with preadsorbed acetylene: Structure, bonding, and chemical reactions

1996 ◽  
Vol 14 (3) ◽  
pp. 1822-1825 ◽  
Author(s):  
S. I. Yi ◽  
W. Widdra ◽  
C. Yan ◽  
W. H. Weinberg
2019 ◽  
Vol 123 (43) ◽  
pp. 26662-26672 ◽  
Author(s):  
Björn Arndt ◽  
Marcus Creutzburg ◽  
Elin Grånäs ◽  
Sergey Volkov ◽  
Konstantin Krausert ◽  
...  

Vacuum ◽  
1994 ◽  
Vol 45 (2-3) ◽  
pp. 299-301 ◽  
Author(s):  
L. Stobiński ◽  
R. Duś

2018 ◽  
Vol 8 (12) ◽  
pp. 2466 ◽  
Author(s):  
Yang Wu ◽  
Zhongmin Wang ◽  
Dianhui Wang ◽  
Jiayao Qin ◽  
Zhenzhen Wan ◽  
...  

To investigate Mo doping effects on the hydrogen permeation performance of Nb membranes, we study the most likely process of atomic hydrogen adsorption and diffusion on/into Mo-doped Nb (100) surface/subsurface (in the Nb12Mo4 case) via first-principles calculations. Our results reveal that the (100) surface is the most stable Mo-doped Nb surface with the smallest surface energy (2.75 J/m2). Hollow sites (HSs) in the Mo-doped Nb (100) surface are H-adsorption-favorable mainly due to their large adsorption energy (−4.27 eV), and the H-diffusion path should preferentially be HS→TIS (tetrahedral interstitial site) over HS→OIS (octahedral interstitial site) because of the correspondingly lower H-diffusion energy barrier. With respect to a pure Nb (100) surface, the Mo-doped Nb (100) surface has a smaller energy barrier along the HS→TIS pathway (0.31 eV).


Nano Letters ◽  
2016 ◽  
Vol 16 (8) ◽  
pp. 4880-4886 ◽  
Author(s):  
Miroslav Kolíbal ◽  
Tomáš Pejchal ◽  
Tomáš Vystavěl ◽  
Tomáš Šikola

2019 ◽  
Vol 21 (10) ◽  
pp. 5424-5434 ◽  
Author(s):  
Yu Wang ◽  
Xiaoguang Li ◽  
Jinlong Yang

The influences of the gold substrate, vacancies in graphene, and extra atomic hydrogen coordination on the magnetism of the TMPc/graphene composites are investigated.


1989 ◽  
Vol 149 ◽  
Author(s):  
M Azuma ◽  
H Shirai ◽  
J. Hanna ◽  
I Shimizu

ABSTRACTChemical reactions were systematically investigated with regard to the propagation of Si-network in the vicinity of the growing surface by using various precursors, SiHn, SiHnFm, and SiHnCim (n+m≤3) generated by plasma-induced decomposition of SiH4, SiF4, SiH2Cl2 and SiHCl3. Atomic hydrogen was an effective agent to promote the propagation reaction due to its strong chemical affinity for silicon and its ability to diffuse through the Si-network. A preliminary analysis was made of the kinetics of the propagation reactions.


Sign in / Sign up

Export Citation Format

Share Document