Slow laser deposition of high quality ErBa2Cu3O7−x thin films

1996 ◽  
Vol 14 (5) ◽  
pp. 2854-2858 ◽  
Author(s):  
A. Del Vecchio ◽  
L. Tapfer ◽  
D. Berling ◽  
B. Loegel ◽  
G. Leggieri ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
High Quality

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Studies on the Characteristics and the Effect of Thickness on the Band Gap Energies of Al2O3 Thin Films Prepared by PLD

2019 ◽  
Vol 290 ◽  
pp. 163-167
Author(s):  
Nurhanna Badar ◽  
Norlida Kamarulzaman ◽  
Annie Maria Mahat ◽  
Nor Fadilah Chayed ◽  
Kelimah Elong
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Laser Deposition ◽  
Uniform Thickness ◽  
High Quality ◽  
Grazing Incidence Diffraction ◽  
Oxygen Gas ◽  
Dense Films

Pulsed laser deposition (PLD) method has the advantages of high quality mirror finish, good densification and uniform thickness. In this work, Al2O3 thin films with different thicknesses were fabricated via the PLD method. The characteristics of the thin film samples were investigated using Grazing Incidence Diffraction (GID) technique and Field Emission Scanning Electron Microscope (FESEM). For the band gap studies, measurements were done using a UV-Vis NIR spectrophotometer. The deposition was done in the presence of oxygen gas with partial pressure of 2.66 Pa. FESEM images showed high quality, smooth and dense films obtained using the PLD method. The Al2O3 thin films have thicknesses of between 71.2 nm to 176 nm. The band gap energies obtained were in the range of 6.29 eV to 6.49 eV. It was observed that the band gap of the thin films increases as the thickness decreases due to the defects in the films.

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
Vol 368-372 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
Morphological Properties ◽  
High Quality ◽  
Atomic Force ◽  
Different Temperatures ◽  
Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

scholarly journals Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

2014 ◽  
Vol 104 (8) ◽  
pp. 082402 ◽  
Author(s):  
Qi I. Yang ◽  
Jinfeng Zhao ◽  
Li Zhang ◽  
Merav Dolev ◽  
Alexander D. Fried ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

2010 ◽  
Vol 25 (10) ◽  
pp. 1886-1889 ◽  
Author(s):  
T. Ohnishi ◽  
B.T. Hang ◽  
X. Xu ◽  
M. Osada ◽  
K. Takada
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Parameter ◽  
Laser Deposition ◽  
Low Oxygen ◽  
High Quality ◽  
Composition Control ◽  
Ablation Laser ◽  
Lower Valence

Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

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