Etch rate and plasma density radial uniformity measurements in a cusped field helicon plasma etcher

1996 ◽  
Vol 14 (3) ◽  
pp. 1041-1045 ◽  
Author(s):  
A. K. Quick ◽  
R. T. S. Chen ◽  
N. Hershkowitz
Keyword(s):  
Plasma Density ◽  
Etch Rate ◽  
Helicon Plasma

Design of a novel high efficiency antenna for helicon plasma sources

2018 ◽  
Vol 84 (3) ◽  
Author(s):  
S. Fazelpour ◽  
A. Chakhmachi ◽  
D. Iraji ◽  
H. Sadeghi
Keyword(s):  
Electromagnetic Wave ◽  
Plasma Density ◽  
High Efficiency ◽  
Plasma Source ◽  
Wave Pattern ◽  
Helicon Plasma ◽  
Plasma Sources ◽  
The Common ◽  
Simulation Results ◽  
Absorption Power

A new configuration for an antenna, which increases the absorption power and plasma density, is proposed for helicon plasma sources. The influence of the electromagnetic wave pattern symmetry on the plasma density and absorption power in a helicon plasma source with a common antenna (Nagoya) is analysed by using the standard COMSOL Multiphysics 5.3 software. In contrast to the theoretical model prediction, the electromagnetic wave does not represent a symmetric pattern for the common Nagoya antenna. In this work, a new configuration for an antenna is proposed which refines the asymmetries of the wave pattern in helicon plasma sources. The plasma parameters such as plasma density and absorption rate for a common Nagoya antenna and our proposed antenna under the same conditions are studied using simulations. In addition, the plasma density of seven operational helicon plasma source devices, having a common Nagoya antenna, is compared with the simulation results of our proposed antenna and the common Nagoya antenna. The simulation results show that the density of the plasma, which is produced by using our proposed antenna, is approximately twice in comparison to the plasma density produced by using the common Nagoya antenna. In fact, the simulation results indicate that the electric and magnetic fields symmetry of the helicon wave plays a vital role in increasing wave–particle coupling. As a result, wave–particle energy exchange and the plasma density of helicon plasma sources will be increased.

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

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