Surface chemical state populations in the molecular beam epitaxy deposition of BaF2 on GaAs by x‐ray photoelectron spectroscopy and heavy‐ion backscattering spectroscopy

1996 ◽  
Vol 14 (1) ◽  
pp. 69-79 ◽  
Author(s):  
M. F. Stumborg ◽  
T. K. Chu ◽  
F. Santiago ◽  
J. L. Price ◽  
N. A. Guardala ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Heavy Ion ◽  
Chemical State ◽  
Surface Chemical ◽  
X Ray ◽  
Ion Backscattering ◽  
Surface Chemical State

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

2010 ◽  
Vol 1252 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Christel Dieker ◽  
Jin Won Seo ◽  
Jean-Pierre Locquet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Mobility ◽  
High Energy ◽  
Epitaxial Relationship ◽  
Dysprosium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Diffraction Patterns

AbstractDysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

Structural and Optical Properties of Zn1-XCoXO Thin Films Fabricated by Laser Molecular Beam Epitaxy

2011 ◽  
Vol 295-297 ◽  
pp. 1958-1963
Author(s):  
Jing Zhi Yang ◽  
Li Juan Fu ◽  
Xiao Peng Qi ◽  
Hong Yun Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Axis Orientation ◽  
X Ray ◽  
Laser Molecular Beam Epitaxy

Zn1-xCoxO thin films on sapphire (0001) substrates were synthesized by laser molecular beam epitaxy (LMBE) method at various temperatures under a work ambient pressure of 5.0 x 10-5Pa condition. X-ray diffraction (XRD) spectra, UV–visible transmission spectra and X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra were employed to characterize the properties of samples. All samples were of wurtzite hexagonal structure with the preferential c-axis-orientation. Co2+ions incorporated into ZnO lattice and substituted for Zn2+ions. ZnLMM Auger spectrum implied Zn interstitials existed in sample. The optical transmission of all samples was relatively high in visible region. Two PL emission peaks located at 418 nm and 490 nm were assigned to the electron transition from the Zn interstitials to the top of the valence band and from the Zn interstitials to the Zn vacancies, respectively.

Changes in Optical Properties of GaAsN During Annealing

2005 ◽  
Vol 891 ◽  
Author(s):  
Ting Liu ◽  
Sandeep Chandril ◽  
Eric D. Schires ◽  
Nianqiang Wu ◽  
Xinqi Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Emission Spectra ◽  
X Ray ◽  
Annealing Temperatures ◽  
Gaas Substrates

ABSTRACTGaAs1−xNx layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

2007 ◽  
Vol 102 (7) ◽  
pp. 074104 ◽  
Author(s):  
H. S. Craft ◽  
R. Collazo ◽  
M. D. Losego ◽  
S. Mita ◽  
Z. Sitar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Band Offsets ◽  
X Ray

scholarly journals Identification of Adsorbed Species and Surface Chemical State on Ag(111) in the Presence of Ethylene and Oxygen Studied with Infrared and X-ray Spectroscopies

Physchem ◽  
2021 ◽  
Vol 1 (3) ◽  
pp. 259-271
Author(s):  
Adva Ben Yaacov ◽  
Roey Ben David ◽  
David C. Grinter ◽  
Georg Held ◽  
Baran Eren
Keyword(s):  
Gas Phase ◽  
Total Pressure ◽  
Oxidation Reaction ◽  
Pressure Range ◽  
Ambient Air ◽  
Chemical State ◽  
Surface Chemical ◽  
Adsorbed Species ◽  
X Ray ◽  
Surface Chemical State

Using a combination of two surface-sensitive spectroscopy techniques, the chemical state of the Ag(111) surface and the nature of the adsorbed species in the presence of ethylene and oxygen gases are identified. In the 10 mbar pressure range and 25–200 °C studied here, Ag(111) remains largely metallic even in O2-rich conditions. The only adsorbed molecular species with a low but discernible coverage is surface carbonate, which forms due to further oxidation of produced CO2, in a similar manner to its formation in ambient air on Ag surfaces. Its formation is also pressure-dependent, for instance, it is not observed when the total pressure is in the 1 mbar pressure range. Production of carbonate, along with carbon dioxide and water vapor as the main gas-phase products, suggests that an unpromoted Ag(111) surface catalyzes mainly the undesired full oxidation reaction.

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