In situ measurements of the recombination at the crystalline silicon/amorphous silicon heterointerface by time resolved microwave conductivity measurements during low temperature annealing and silane plasma exposure

1995 ◽  
Vol 13 (6) ◽  
pp. 2753-2757 ◽  
Author(s):  
H. C. Neitzert ◽  
M. Kunst
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Conductivity Measurements ◽  
Plasma Exposure ◽  
Microwave Conductivity ◽  
Time Resolved ◽  
Low Temperature Annealing ◽  
Silane Plasma

Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.M. Poate ◽  
J.S. Williams ◽  
J.M. Gibson ◽  
D.C. Jacobson ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Diffusion Coefficients ◽  
Crystalline Silicon ◽  
Tracer Diffusion ◽  
Separation Processes ◽  
Low Temperature Annealing ◽  
Tracer Diffusion Coefficients ◽  
Concentration Diffusion

ABSTRACTDiffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.

Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC

2004 ◽  
Vol 808 ◽  
Author(s):  
A. Klaver ◽  
J.M. Warman ◽  
M.P. de Haas ◽  
J.W. Metselaar ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Simple Model ◽  
Amorphous Silicon ◽  
Electron Irradiation ◽  
Probe Beam ◽  
Electron Accelerator ◽  
Defect Density ◽  
Irradiation Damage ◽  
Microwave Conductivity ◽  
Time Resolved

ABSTRACTThe effects of 3-MeV electron irradiation on a-Si:H have been studied using Time-Resolved Microwave Conductivity (TRMC). A Van der Graaff electron accelerator is used to generate the probe-beam pulses for the TRMC experiment as well as for the in-situ irradiation of the samples for the degradation of the material. Using several probe-beam pulse doses, TRMC transients were obtained on samples that have been subjected to various radiation fluences. These transients were later analyzed using a simple model based on the Shockley-Read-Hall capture and emission processes. Using these simulations we deduce a relationship between the radiation fluence and the defect density in the material.

Formation and Crystallization of Amorphous Silicides at the Interface Between Thin Metal and Amorphous Silicon Films

1982 ◽  
Vol 18 ◽  
Author(s):  
S. R. Herd ◽  
K. Y. Ahn ◽  
K. N. Tu
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Phase ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Diffraction Peak ◽  
Gold Films ◽  
Cubic Form ◽  
No Formation ◽  
Transmission Electron

We investigated the interaction of extremely thin (less than 10 nm) crystalline gold and rhodium films with amorphous silicon by transmission electron microscope in situ annealing. In thin Au/Si bilayers an amorphous phase with a diffraction peak at d ≂ 0.226 nm is formed by thermal annealing between 150 and 200 °C. Depending on the thickness and composition, silicon sputtered onto thin gold films leads to the formation of a layer of amorphous silicon and a partially amorphous Au-Si layer during deposition. The silicon layer crystallizes by itself at temperatures as low as 150 °C, and at 300 °C the amorphous Au–Si layer crystallizes into a metastable gold silicide (for silicon-rich compositions). In Rh/Si bilayers an amorphous Rh–Si phase is formed by annealing to 300 °C and can be detected by electron diffraction for a rhodium thickness of less than 5 nm and compositions with more than 50% Si if completely reacted. Above 300 °C the amorphous Rh-Si crystallizes preferentially in the cubic form of RhSi for intermediate silicon compositions and in the orthorhombic form of RhSi for high silicon compositions. Excess amorphous silicon is not found to have a lowered crystallization temperature when in contact with the amorphous Rh-Si alloy, and crystalline silicon is only observed above 730 °C together with the cubic and/or orthorhombic RhSi. In Rh/Si bilayers with a thicker rhodium layer, no formation of an amorphous phase was observed on annealing; instead crystalline Rh2Si forms during annealing above 300 °C.

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