Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques

1995 ◽  
Vol 13 (4) ◽  
pp. 2199-2209 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Spatial Separation ◽  
Silicon Oxycarbide ◽  
Separation Techniques ◽  
Doped Silicon

The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato
Keyword(s):  
Experimental Data ◽  
Spatial Separation ◽  
Wide Band ◽  
Silicon Oxycarbide ◽  
Preparation Process ◽  
Microcrystalline Silicon ◽  
Wide Band Gap ◽  
Doped Silicon ◽  
System 1

ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Role of oxygen partial pressure and seed layer chemistry in flux mediated epitaxy of single phase multiferroic BiFeO3 thin films

2008 ◽  
Vol 93 (19) ◽  
pp. 192906 ◽  
Author(s):  
Varatharajan Anbusathaiah ◽  
Ching Jung Cheng ◽  
Sung Hwan Lim ◽  
Makoto Murakami ◽  
Lourdes G. Salamanca-Riba ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Seed Layer ◽  
Single Phase ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

Oxidation of 1-butene and butadiene to maleic anhydride. 1. Role of oxygen partial pressure

1983 ◽  
Vol 22 (4) ◽  
pp. 565-570 ◽  
Author(s):  
Fabrizio Cavani ◽  
Gabriele Centi ◽  
Italo Manenti ◽  
Alfredo Riva ◽  
Ferruccio Trifiro
Keyword(s):  
Maleic Anhydride ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

Role of the oxygen partial pressure on the properties of undoped tin oxide films deposited at low temperature

2008 ◽  
Vol 205 (8) ◽  
pp. 1957-1960
Author(s):  
P. Parreira ◽  
J. Valente ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
A. R. Ramos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Martins ◽  
I. Ferreira ◽  
E. Fortunato ◽  
M. Vieira
Keyword(s):  
Band Gap ◽  
Spatial Separation ◽  
Wide Band ◽  
Silicon Oxycarbide ◽  
Wide Band Gap ◽  
Deposition Chamber ◽  
Optical Gap ◽  
Composition Structure ◽  
Partial Oxygen

ABSTRACTSilicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

Antioxidant and Prooxidant Role of β-Carotene in Murine Normal and Tumor Thymocytes: Effects of Oxygen Partial Pressure

1997 ◽  
Vol 22 (6) ◽  
pp. 1065-1073 ◽  
Author(s):  
Paola Palozza ◽  
Chiara Luberto ◽  
Gabriella Calviello ◽  
Paola Ricci ◽  
Gianna Maria Bartoli
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Β Carotene
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