Crystal orientation control of YBa2Cu3Oy thin films on MgO prepared by excimer laser ablation with CO2 laser irradiation

1995 ◽  
Vol 13 (2) ◽  
pp. 255-259 ◽  
Author(s):  
Muneto Inayoshi ◽  
Mineo Hiramatsu ◽  
Yoshiaki Sugiura ◽  
Hideaki Kawamura ◽  
Masahito Nawata
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Co2 Laser ◽  
Crystal Orientation ◽  
Orientation Control ◽  
Excimer Laser Ablation

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

Growth and study of SrBi2 (Ta, Nb)2 O9 thin films by pulsed excimer laser ablation

2000 ◽  
Vol 114 (11) ◽  
pp. 585-588 ◽  
Author(s):  
S Bhattacharyya ◽  
S.S.N Bharadwaja ◽  
S.B Krupanidhi
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation

Characterization of C-N thin films deposited by reactive excimer laser ablation of graphite targets in nitrogen atmosphere

1997 ◽  
Vol 307 (1-2) ◽  
pp. 54-59 ◽  
Author(s):  
A.P. Caricato ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Perrone ◽  
E. Gyorgy ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Nitrogen Atmosphere ◽  
Excimer Laser Ablation

Preparation of PZT/YBCO/YAIO Heterostructure Thin Films by KrF Excimer Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Kenji Ebihara ◽  
Hiromnitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Ferroelectric Properties ◽  
Perovskite Oxide ◽  
Excimer Laser Ablation ◽  
Fatigue Characteristics ◽  
Krf Excimer Laser ◽  
Operation Frequency ◽  
Deposition Conditions

AbstractThe perovskite oxide YBa2Cu3O7-x (YBCO) and Pb(ZrxTi1-x)O3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200-600mTorr O2, 2-3J/cm2 and 5-10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO3:Nd show the zero resistivity critical temperature of 82K and excellent ferroelectric properties of remnant polarization 32 μC/cm2, coercive force of 80kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Fabrication of High Density Silicon Nano-Dots by Excimer Laser Irradiation on Block Copolymer Masks

2007 ◽  
Author(s):  
Dae Up Ahn ◽  
Erol Sancaktar
Keyword(s):  
Laser Ablation ◽  
Block Copolymer ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Ablation Threshold ◽  
Laser Intensity ◽  
Selective Etching ◽  
Time Duration ◽  
Excimer Laser Ablation ◽  
Excimer Laser Irradiation

We report easy and fast fabrication methods to prepare densely packed polystyrene (PS) and silicon nano-dots using one-step excimer laser irradiation on cylindrically nanopatterned block copolymer materials, without any additional selective etching steps before a non-selective etching. Preferential etching in more ultraviolet (UV)-sensitive block component, and non-selective removal of all block components allowed transferring nanopatterns in block copolymer masks to inorganic silicon substrates, when an appropriate laser intensity was used. Surface melt flows of block components, which severely undermine the initial orders of nanopatterns in a block copolymer mask, were observed at the laser intensity near the ablation threshold of the less UV-sensitive component. Thus, in order to obtain mask-image-like topographic nanopatterns on the target material surfaces, the intensity of excimer laser radiation should be sufficiently lower than the ablation threshold of the less UV-sensitive component as long as the intensity is higher than that of the more UV-sensitive component. Numerical analyses on the photothermal excimer laser ablation in binary mixture systems predicted the presence of a matrix-assisted excimer laser ablation in the less UV-sensitive component at the laser intensity lower than its ablation threshold, owing to the heat conduction from the more UV-sensitive component during the nanoscopic level of time duration.

scholarly journals Preparation of Polyacenic Semiconductor (PAS) Thin Films by Excimer Laser Ablation of Bulky PAS Materials.

1999 ◽  
Vol 12 (1) ◽  
pp. 81-84
Author(s):  
Satoru Nishio ◽  
Yoji Narisada ◽  
Shigenori Kuriki ◽  
Akiyoshi Matsuzaki ◽  
Hiroyasu Sato ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation
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