Improved epitaxial layer design for real‐time monitoring of dry etching in III–V compound heterostructures with depth accuracy of ±8 nm
1994 ◽
Vol 12
(4)
◽
pp. 1973-1977
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Keyword(s):
Keyword(s):
2001 ◽
Vol 11
(PR3)
◽
pp. Pr3-1175-Pr3-1182
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Keyword(s):
2010 ◽
Vol 9
(1)
◽
pp. 133-140
2019 ◽
Vol 18
(7)
◽
pp. 1561-1574