Pulsed ion beam surface analysis as a means of in situ real‐time analysis of thin films during growth

1994 ◽  
Vol 12 (4) ◽  
pp. 1943-1951 ◽  
Author(s):  
A. R. Krauss ◽  
Y. Lin ◽  
O. Auciello ◽  
G. J. Lamich ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Surface Analysis ◽  
Ion Beam ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Beam Surface

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

scholarly journals Enzymatic Hydrolysis of Polyester Thin Films: Real-Time Analysis of Film Mass Changes and Dissipation Dynamics

2015 ◽  
Vol 50 (1) ◽  
pp. 197-206 ◽  
Author(s):  
Michael Thomas Zumstein ◽  
Hans-Peter E. Kohler ◽  
Kristopher McNeill ◽  
Michael Sander
Keyword(s):  
Thin Films ◽  
Enzymatic Hydrolysis ◽  
Real Time ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Hydrolysis Of

scholarly journals In-Situ and Real-Time Analysis of the Formation of Strains and Microstructure Defects during Solidification of Al-3.5 Wt Pct Ni Alloys

2008 ◽  
Vol 39 (4) ◽  
pp. 865-874 ◽  
Author(s):  
G. Reinhart ◽  
A. Buffet ◽  
H. Nguyen-Thi ◽  
B. Billia ◽  
H. Jung ◽  
...  
Keyword(s):  
Real Time ◽  
Time Analysis ◽  
Ni Alloys ◽  
Real Time Analysis

In situ and real-time analysis of TGZM phenomena by synchrotron X-ray radiography

2008 ◽  
Vol 310 (11) ◽  
pp. 2906-2914 ◽  
Author(s):  
H. Nguyen Thi ◽  
G. Reinhart ◽  
A. Buffet ◽  
T. Schenk ◽  
N. Mangelinck-Noël ◽  
...  
Keyword(s):  
Real Time ◽  
Time Analysis ◽  
X Ray ◽  
Real Time Analysis

scholarly journals In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique

1994 ◽  
Vol 341 ◽  
Author(s):  
Orlando Auciello ◽  
A. R. Krauss ◽  
Y. Lin ◽  
R. P. H. Chang ◽  
D. M. Gruen
Keyword(s):  
Real Time ◽  
Surface Segregation ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Scattering ◽  
Real Time Analysis ◽  
Analysis Technique ◽  
Conductive Oxide ◽  
New Time

AbstractA new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

1999 ◽  
Vol 569 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Ion Beam ◽  
Oxygen Deficiency ◽  
Ion Beam Sputtering ◽  
Optical Absorption Peak ◽  
Beam Sputtering ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

Histological, Spectroscopic, and Surface Analysis of Microdamage in Bone:  Toward Real-Time Analysis Using Fluorescent Sensors

2007 ◽  
Vol 19 (7) ◽  
pp. 1656-1663 ◽  
Author(s):  
Raman Parkesh ◽  
Sahar Mohsin ◽  
T. Clive Lee ◽  
Thorfinnur Gunnlaugsson
Keyword(s):  
Real Time ◽  
Surface Analysis ◽  
Fluorescent Sensors ◽  
Time Analysis ◽  
Real Time Analysis
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