Structural and morphological characterization of Nb2O5 thin films deposited by reactive sputtering

1994 ◽  
Vol 12 (1) ◽  
pp. 135-139 ◽  
Author(s):  
D. Rosenfeld ◽  
R. Sanjinés ◽  
F. Lévy ◽  
P. A. Buffat ◽  
V. Demarne ◽  
...  
2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C


2020 ◽  
Vol 109 ◽  
pp. 110295
Author(s):  
S.G. Ruvalcaba-Manzo ◽  
S.J. Castillo ◽  
R. Ochoa-Landín ◽  
M. Flores-Acosta ◽  
R. Ramírez-Bon

2008 ◽  
Vol 108 (2-3) ◽  
pp. 312-318 ◽  
Author(s):  
F.M. Pontes ◽  
M.S. Galhiane ◽  
L.S. Santos ◽  
R.S. Rissato ◽  
D.S.L. Pontes ◽  
...  

1989 ◽  
Vol 170 (2) ◽  
pp. 285-291 ◽  
Author(s):  
F.C. Stedile ◽  
B.A.S. De Barros ◽  
C.V.Barros Leite ◽  
F.L. Freire ◽  
I.J.R. Baumvol ◽  
...  

2015 ◽  
Vol 23 (3) ◽  
pp. 703-709 ◽  
Author(s):  
A. Ababneh ◽  
A. N. Al-Omari ◽  
A. M. K. Dagamseh ◽  
M. Tantawi ◽  
C. Pauly ◽  
...  

2011 ◽  
Vol 519 (7) ◽  
pp. 2135-2140 ◽  
Author(s):  
R. Velazquez-Hernandez ◽  
I. Rojas-Rodriguez ◽  
J. Carmona-Rodríguez ◽  
S. Jiménez-Sandoval ◽  
M.E. Rodriguez-Garcia

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