Effects of plasma enhancement on the carrier‐gas‐free metalorganic chemical‐vapor deposition of oxide superconducting thin films

1994 ◽  
Vol 12 (1) ◽  
pp. 130-134 ◽  
Author(s):  
Keiichi Kanehori ◽  
Shin’ichiro Saito ◽  
Nobuyuki Sugii ◽  
Kazushige Imagawa
1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.


1993 ◽  
Vol 8 (9) ◽  
pp. 2414-2415
Author(s):  
Nobuhiko Kubota ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka

“(110)-oriented Bi–Sr–Ca–Cu–O superconducting thin films prepared by metalorganic chemical vapor deposition” [J. Mater. Res. 8, 978 (1993)]


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