Structural change of titanium oxide evaporated films during in situ heating in an electron microscope

1993 ◽  
Vol 11 (5) ◽  
pp. 2642-2648 ◽  
Author(s):  
Y. Yamada ◽  
I. Shiota ◽  
K. Yoshida
Keyword(s):  
Electron Microscope ◽  
Structural Change ◽  
Titanium Oxide ◽  
In Situ Heating

In-Situ Heating Study on the Structural Change of Surfactant-Templated Germanium Oxide Mesostructure

2008 ◽  
Vol 112 (39) ◽  
pp. 12297-12303 ◽  
Author(s):  
Xing Chen ◽  
Quan Cai ◽  
Wei Wang ◽  
Guang Mo ◽  
Longsheng Jiang ◽  
...  
Keyword(s):  
Structural Change ◽  
Germanium Oxide ◽  
In Situ Heating

To-and-Fro Motion of W5Si3 on a β-Si3N4 Substrate at Elevated Temperatures

2002 ◽  
Vol 8 (1) ◽  
pp. 16-20 ◽  
Author(s):  
S. Arai ◽  
K. Suzuki ◽  
H. Saka
Keyword(s):  
Electron Microscope ◽  
High Temperatures ◽  
Transmission Electron Microscope ◽  
Elevated Temperatures ◽  
Fine Particles ◽  
Transmission Electron ◽  
In Situ Heating

Behavior of fine crystalline particles of W5Si3 on a β-Si3N4 substrate at high temperatures was observed by an in situ heating experiment in a transmission electron microscope. Some of the fine particles of W5Si3 moved in a to-and-fro manner.

Transmission electron microscopy studies of Bi-substituted garnet films

1991 ◽  
Vol 49 ◽  
pp. 774-775
Author(s):  
P.A. Labun ◽  
P.A. Crazier ◽  
T. Suzuki
Keyword(s):  
Electron Microscope ◽  
Thermal Annealing ◽  
Optical Recording ◽  
Maximum Temperature ◽  
Nominal Composition ◽  
Garnet Films ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
In Situ Heating

Bi-substituted garnet films have attracted much attention as possible materials for high density magneto-optical recording media. Recently a new rapid thermal annealing technique has been developed to produce garnet films with improved microstructural and magnetic properties. We have employed in-situ heating in an analytical electron microscope to characterize the microstructural changes to the morphology and chemistry during thermal annealing of garnet films.Garnet films were produced by an r.f. magnetron sputter deposition method in an Ar atmosphere. The nominal composition of the films was (BiDy)3(FeGa)5O12 with a thickness of ∼ 40 nm. The films were transferred into the hot stage of a Philips 400T transmission electron microscope and heated to a maximum temperature of 720 C. Different rates were used to simulate the effect of heat pulsed annealing.

In Situ Observation of Melting and Solidification

1999 ◽  
Vol 589 ◽  
Author(s):  
H. Saka ◽  
S. Arai ◽  
S. Muto ◽  
H. Miyai ◽  
S. Tsukimoto
Keyword(s):  
Electron Microscope ◽  
Grain Boundaries ◽  
Eutectic Alloy ◽  
Atomic Structure ◽  
In Situ Observation ◽  
Metallic Materials ◽  
Experimental Image ◽  
In Situ Heating ◽  
Melting And Solidification

AbstractMelting and solidification of metallic materials have been observed directly using an in-situ heating experiment in an electron microscope. In pure Al melting initiates at the surface, while in a eutectic alloy melting initiates preferentially at eutectic interfaces and grain boundaries. The atomic structure of a solidliquid interface was identified by comparing an experimental image with computed ones.

TEM in situ annealing of fluorine-implanted amorphized silicon

1991 ◽  
Vol 49 ◽  
pp. 874-875
Author(s):  
Vidya S. Kaushik ◽  
Robert L. Hance ◽  
Charlotte L. Grove
Keyword(s):  
Electron Microscope ◽  
Room Temperature ◽  
Material Behavior ◽  
In Situ Tem ◽  
Wide Angle ◽  
Sample Holder ◽  
Annealing Behavior ◽  
Transmission Electron ◽  
In Situ Heating

In situ heating experiments in the transmission electron microscope offer unique opportunities to visualize and understand material behavior. The annealing behavior of silicon amorphized by conventional dopant implants as studied by in situ TEM has been reported in the literature. As part of a study on the behavior of fluorine in silicon, we have performed in situ anneals of fluorine-implanted amorphized silicon on XTEM samples, and compared these with bulk furnace-annealed samples.The wafer was an n-type (100) silicon (18-24 ohm-cm) implanted with 1 x 1016 /cm2 fluorine at 60 keV at room temperature through a 13 nm oxide layer. The XTEM samples were heated within the TEM in a Gatan sample holder in a JEOL 2000 FXII STEM operated at 200 kV. The behavior of the sample was observed using a wide angle CCD TV camera and recorded on videotape. Micrographs were recorded before the anneal and after the temperature had stabilized.

Charge compensation by in-situ heating for insulating ceramics in scanning electron microscope

2009 ◽  
Vol 109 (11) ◽  
pp. 1326-1332 ◽  
Author(s):  
Li Wang ◽  
Yuan Ji ◽  
Bin Wei ◽  
Yinqi Zhang ◽  
Jingyong Fu ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Charge Compensation ◽  
In Situ Heating ◽  
Insulating Ceramics ◽  
Scanning Electron
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