Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma

1993 ◽  
Vol 11 (4) ◽  
pp. 1283-1288 ◽  
Author(s):  
J. Ding ◽  
J.‐S. Jenq ◽  
G.‐H. Kim ◽  
H. L. Maynard ◽  
J. S. Hamers ◽  
...  
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