Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
1993 ◽
Vol 11
(4)
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pp. 1283-1288
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1991 ◽
Vol 137-138
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pp. 859-862
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2003 ◽
Vol 74
(7)
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pp. 3279-3283
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1992 ◽
Vol 10
(4)
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pp. 1276-1280
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