Ionicity dependence of surface bond lengths on the (110) cleavage faces of isoelectronic zincblende structure compound semiconductors: GaP, ZnS, and CuCl

1993 ◽  
Vol 11 (4) ◽  
pp. 2205-2209 ◽  
Author(s):  
D. L. Lessor ◽  
C. B. Duke ◽  
A. Kahn ◽  
W. K. Ford
Keyword(s):  
Compound Semiconductors ◽  
Bond Lengths ◽  
Surface Bond

Further analysis of surface bond lengths measured for chemisorption on metal surfaces

1986 ◽  
Vol 64 (7) ◽  
pp. 1385-1389 ◽  
Author(s):  
K. A. R. Mitchell ◽  
S. A. Schlatter ◽  
R. N. S. Sodhi
Keyword(s):  
Structural Data ◽  
Bond Lengths ◽  
Alternative Approach ◽  
Length Data ◽  
Surface Metal ◽  
Solid Compounds ◽  
General Reliability ◽  
Predictive Approaches ◽  
Model Structures ◽  
Surface Bond

This paper compares bond lengths deduced from the methods of surface crystallography with predictions from the Pauling–Schomaker–Stevenson approach and from a new alternative approach suggested by recent work of Brown and Altermatt. Examples considered are specifically for X—M surface bond lengths where atoms X from groups 16 or 17 are adsorbed on well-defined surfaces of a metal M. The alternative approach introduced here is parametrised with reference to structural data from solid compounds of formula MX. The two predictive approaches considered, when used together, appear to be quite adequate for guiding choices of trial model structures to be included in surface crystallographic analyses with low-energy electron diffraction (LEED); also they seem reasonable for checking the general reliability (or otherwise) of surface bond length data. Two further features introduced by this work are (i) evidence that the Cl—Ag distance reported by LEED for Cl adsorbed on the Ag(100) surface is broadly consistent with the structure of solid AgCl; (ii) evidence for S adsorbed on the Fe(110) surface that these analyses can guide investigations of lateral relaxations of surface metal atoms. As more reliable structural data become available, extensions of these analyses should help to identify the finer details in X—M bond lengths which result from the special coordination arrangements occurring at surfaces.

Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)

1978 ◽  
Vol 17 (8) ◽  
pp. 3303-3309 ◽  
Author(s):  
S. Y. Tong ◽  
A. R. Lubinsky ◽  
B. J. Mrstik ◽  
M. A. Van Hove
Keyword(s):  
Bond Angle ◽  
Bond Lengths ◽  
Surface Bond

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Vibrational spectra of aquadioxotetra; peroxodivanadates(V) M2[V2O2(O2)4(H2O)]·xH2O (M = N(CH3)4, Cs)

1990 ◽  
Vol 55 (6) ◽  
pp. 1485-1490 ◽  
Author(s):  
Peter Schwendt ◽  
Milan Sýkora
Keyword(s):  
Raman Spectra ◽  
Vibrational Spectra ◽  
Normal Coordinate Analysis ◽  
Force Constants ◽  
Infrared And Raman Spectra ◽  
Empirical Correlations ◽  
Normal Coordinate ◽  
Bond Lengths ◽  
Stretching Vibrations

The infrared and Raman spectra of M2[V2O2(O2)4(H2O)]·xH2O and M2[V2O2(O2)4(D2O)]·xD2O (M = N(CH3)4, Cs) were measured. In the region of the vanadium-oxygen stretching vibrations, the spectra were interpreted based on normal coordinate analysis, employing empirical correlations between the bond lengths and force constants.

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