scholarly journals Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayers

1993 ◽  
Vol 11 (4) ◽  
pp. 860-868 ◽  
Author(s):  
Scott A. Chambers
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Control ◽  
Variable Band Gap

W/Si1-xGex Schottky Barrier: Effect of Stress and Composition

1994 ◽  
Vol 338 ◽  
Author(s):  
F. Meyer ◽  
V. Aubry ◽  
P. Warren ◽  
D. Dutartre
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Conduction Band ◽  
Schottky Barrier Height ◽  
Barrier Effect ◽  
P Type

ABSTRACTThe Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.

Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction

MRS Advances ◽  
2019 ◽  
Vol 4 (38-39) ◽  
pp. 2127-2134
Author(s):  
Neetika ◽  
Ramesh Chandra ◽  
V. K. Malik
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Schottky Junction ◽  
Transition Metal Dichalcogenide ◽  
Dc Sputtering ◽  
Current Voltage ◽  
Dc Sputtering Technique

AbstractMolybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (∼1.2 eV) for few layer and direct band gap (∼1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS2 thin film (∼10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ∼ 0.785x10-2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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