Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor

1993 ◽  
Vol 11 (6) ◽  
pp. 3053-3061
Author(s):  
Gregory B. Raupp ◽  
Dimitris A. Levedakis ◽  
Timothy S. Cale
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reactor ◽  
Thickness Uniformity ◽  
Pressure Chemical

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Sign in / Sign up

Export Citation Format

Share Document