Nucleation and growth of DyBa2Cu3O7−x thin films on SrTiO3 substrates studied by transmission electron microscopy and atomic force microscopy

1992 ◽  
Vol 10 (4) ◽  
pp. 1531-1536 ◽  
Author(s):  
V. Agrawal ◽  
N. Chandrasekhar ◽  
Y. J. Zhang ◽  
V. S. Achutharaman ◽  
M. L. Mecartney ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Phase separation in SiO2–TiO2 gel and glassy films studied by atomic force microscopy and transmission electron microscopy

2001 ◽  
Vol 16 (6) ◽  
pp. 1626-1631 ◽  
Author(s):  
A. Karthikeyan ◽  
Rui M. Almeida
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Phase Separation ◽  
Sol Gel ◽  
Force Microscopy ◽  
Pure Silica ◽  
Atomic Force ◽  
Transmission Electron

An investigation of phase separation phenomena in gel and glassy thin films of silica–titania, with TiO2 contents of 20 and 40 mol%, has been carried out by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The thin films were prepared by spin coating of a precursor sol on silicon wafers. Both the TEM measurements (carried out on scrapped thin film flakes) and the AFM measurements (carried out on films coated on the silicon substrates) for samples with different heat treatments suggest that spinodal-like structural inhomogeneities occur in these samples, unlike the corresponding observations in pure silica films, which are known to be homogeneous. Changes in the microstructure of the films have been noticed with the thermal treatment, in agreement with earlier x-ray photoemission studies. The finer characteristic dimensions of the phase separated regions reveal that silica–titania samples prepared by sol-gel processing exhibit a more intimate mixing of the phases.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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