CO interaction with ultrathin MgO films on a Mo(100) surface studied by infrared reflection–absorption spectroscopy, temperature programmed desorption, and x‐ray photoelectron spectroscopy

1992 ◽  
Vol 10 (4) ◽  
pp. 2248-2252 ◽  
Author(s):  
Jian‐Wei He ◽  
Jason S. Corneille ◽  
Cesar A. Estrada ◽  
Ming‐Cheng Wu ◽  
D. Wayne Goodman
Keyword(s):  
Absorption Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Temperature Programmed Desorption ◽  
X Ray ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Temperature Programmed

scholarly journals Adsorption of acrolein, propanal, and allyl alcohol on Pd(111): a combined infrared reflection–absorption spectroscopy and temperature programmed desorption study

2016 ◽  
Vol 18 (20) ◽  
pp. 13960-13973 ◽  
Author(s):  
Karl-Heinz Dostert ◽  
Casey P. O'Brien ◽  
Francesca Mirabella ◽  
Francisco Ivars-Barceló ◽  
Swetlana Schauermann
Keyword(s):  
Absorption Spectroscopy ◽  
Allyl Alcohol ◽  
Temperature Programmed Desorption ◽  
Mechanistic Study ◽  
Partial Hydrogenation ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Desorption Study ◽  
Temperature Programmed

We present a mechanistic study on adsorption of acrolein and its partial hydrogenation products propanal and allyl alcohol over Pd(111) to understand the factors governing the selectivity in acrolein hydrogenation.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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