Ion‐induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

1991 ◽  
Vol 9 (3) ◽  
pp. 1395-1401 ◽  
Author(s):  
Eun‐Hee Cirlin ◽  
John J. Vajo ◽  
Robert E. Doty ◽  
T. C. Hasenberg
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Sample Rotation ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Новое ограничение разрешения по глубине при послойном элементном анализе методом времяпролетной вторично-ионной масс-спектрометрии: влияние зондирующего ионного пучка

2018 ◽  
Vol 44 (8) ◽  
pp. 11
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.В. Новиков ◽  
П.А. Юнин ◽  
Д.В. Юрасов
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Criterion A ◽  
Ion Mass Spectrometry ◽  
Low Energies ◽  
Elemental Depth ◽  
Secondary Ion

AbstractNew data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.

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