Intrinsic stress and mechanical properties of hydrogenated silicon carbide produced by plasma‐enhanced chemical vapor deposition

1991 ◽  
Vol 9 (4) ◽  
pp. 2459-2463 ◽  
Author(s):  
Henry Windischmann
2008 ◽  
Vol 23 (6) ◽  
pp. 1785-1796 ◽  
Author(s):  
E. López-Honorato ◽  
P.J. Meadows ◽  
J. Tan ◽  
P. Xiao

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.


Author(s):  
Marcelo Lopes Pereira Junior ◽  
Wiliam Ferreira da Cunha ◽  
Douglas Soares Galvão ◽  
Luiz Antonio Ribeiro Junior

Recently, laser-assisted chemical vapor deposition has been used to synthesize a free-standing, continuous, and stable monolayer amorphous carbon (MAC).


1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  

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