Studies of the interface between the epoxy molding compound and the copper leadframe by x‐ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary electron microscopy

1990 ◽  
Vol 8 (6) ◽  
pp. 4074-4078 ◽  
Author(s):  
F. M. Pan ◽  
S. R. Horng ◽  
T. D. Yang ◽  
V. Tang
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Epoxy Molding Compound ◽  
Molding Compound ◽  
X Ray

An Analytical Electron Microscopy and surface analysis study of diamond films

1990 ◽  
Vol 48 (4) ◽  
pp. 1090-1091
Author(s):  
A.E. Henderson ◽  
A.G. Fitzgerald ◽  
S.M. Potrous ◽  
B.E. Storey
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Analytical Electron Microscopy ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Crystal Silicon ◽  
X Ray

The formation of diamond films by plasma assisted chemical vapour deposition (PACVD) techniques has become an area of intense interest over the past few years. These films have potential applications in optical devices, microelectronics and as wear resistant coatings. To exploit the unique properties of these diamond coatings they must be fully characterized.In this investigation polycrystalline diamond films produced by PACVD, on single crystal silicon substrates have been studied by a range of microbeam analytical techniques. Surface analyses have been made in a VG Microscopes HB100 UHV SEM by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Depth composition profiles have been made by Auger electron spectroscopy. The silicon-diamond interface region has been investigated by x-ray microanalysis in a JEOL T300 SEM. The diamond films were prepared for transmission electron microscopy by dissolving away the silicon substrate in an HF/nitric acid solution. The resulting free standing diamond film was ion thinned to produce electron transparent areas. The thinned film was then sandwiched in a folding electron microscope grid for analysis in a JEOL 100C STEM.

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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