Low‐temperature pulsed plasma deposition. II. The production of novel amorphous compounds of germanium in thin film

1989 ◽  
Vol 7 (3) ◽  
pp. 1099-1104 ◽  
Author(s):  
G. Scarsbrook ◽  
I. P. Llewellyn ◽  
R. A. Heinecke
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Amorphous Compounds ◽  
Pulsed Plasma Deposition

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

2012 ◽  
Vol 1447 ◽  
Author(s):  
P. Nozar ◽  
G. Mittica ◽  
S. Milita ◽  
C. Albonetti ◽  
F. Corticelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cubic Phase ◽  
Pulsed Plasma ◽  
Grid Parity ◽  
Type Semiconductor ◽  
Pulsed Plasma Deposition ◽  
Quartz Substrates

ABSTRACTCdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

Room Temperature Deposition of Highly Transparent n-ZnO on PET and ZnO Semiconductor FET

2012 ◽  
Vol 1436 ◽  
Author(s):  
Alessandro Neri ◽  
Riccardo Lotti ◽  
Dmitry Yarmolich ◽  
Petr Nozar ◽  
Santiago Quiroga ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Near Ir ◽  
Pattern Structures ◽  
Plasma Ablation ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Pulsed Plasma Deposition

ABSTRACTIn this paper we report on the fabrication of n-doped ZnO and semiconducting n-ZnO at room temperature by a new ablation deposition technology that makes use of electron/plasma ablation sources named Pulsed Plasma Deposition (PPD) developed by Organic Spintronics Srl.The oxygen vacancies n-doped ZnO PPD grown thin film is deposited on PET and shows a resistivity of 3 x 10-4ohm cm. The n-ZnO TCO is compact, smooth and highly transparent in the UV-VIS (better than 90 T%) as well as in the near IR spectral range and it is remarkably temperature stable. Typical ZnO deposition rate of the PPD is 500 nm/min.The RT deposited semiconductor ZnO shows a very large Hall electron mobility up to 1000 cm2/Vs approaching that of the single crystal. Preliminary results of Si/SiO2 based bottom gate and contact FET test pattern structures with a 50 nm overlaying ZnO thin film shows an ON/OFF ratio of 50000 and a FET mobility of 1 cm2/Vs. Further implementation on appropriate FET design will be performed to explore the possibility to achieve a larger FET mobility. The PPD proves to be an enabling technology that makes it possible the advent of flexible OLED displays.

Pulsed Plasma Deposition from Vinyltrimethylsilane/Oxygen Mixtures

2009 ◽  
Vol 6 (2) ◽  
pp. 132-138 ◽  
Author(s):  
Adriano Francescangeli ◽  
Fabio Palumbo ◽  
Riccardo d'Agostino ◽  
Christophe Defranoux
Keyword(s):  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Pulsed Plasma Deposition

Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition

2009 ◽  
Vol 60 (5) ◽  
pp. 415-419 ◽  
Author(s):  
Yanwei Huang ◽  
Qun Zhang ◽  
Guifeng Li ◽  
Ming Yang
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Oxide Thin Films ◽  
Pulsed Plasma Deposition

Corrosion protection of titanium by pulsed plasma deposition of palladium

2000 ◽  
Vol 42 (7) ◽  
pp. 1213-1234 ◽  
Author(s):  
S.D. Barson ◽  
P. Skeldon ◽  
G.E. Thompson ◽  
J. Piekoszewski ◽  
A.G. Chmielewski ◽  
...  
Keyword(s):  
Corrosion Protection ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Pulsed Plasma Deposition
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