Improved structural quality of molecular‐beam epitaxy HgCdTe films

1989 ◽  
Vol 7 (2) ◽  
pp. 517-522 ◽  
Author(s):  
R. J. Koestner ◽  
H.‐Y. Liu ◽  
H. F. Schaake ◽  
T. R. Hanlon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Quality

scholarly journals Morphology and surface reconstructions of m-plane GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
L. Lymperakis ◽  
J. Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Structural Quality ◽  
Surface Reconstructions ◽  
Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
W. De Raedt ◽  
J. Vanhellemont ◽  
G. Zou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Spectral Response ◽  
Structural Quality ◽  
Rutherford Back Scattering ◽  
Si Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
K Current

ABSTRACTInAs and InAs0.85Sb0.15p-“i”-n structures were grown on InAs, GaAs and Si substrates by Molecular Beam Epitaxy. The structural quality of the layers is discussed using Transmission Electron Microscopy and Rutherford Back Scattering. The influence of the material quality on the 77 K current-voltage measurements is explained. The spectral response of the devices was measured demonstrating peak responsivities of 2.1 A/W at 3.5μm wavelength for InAs0.85Sb0.15 detectors with a 4.3 μm cut-off wavelength.

scholarly journals Спонтанное и стимулированное излучение двухчастотного квантово-каскадного лазера

2019 ◽  
Vol 53 (3) ◽  
pp. 365
Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
А.С. Курочкин ◽  
Е.С. Колодезный ◽  
В.Н. Неведомский ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spontaneous Emission ◽  
Solid Solutions ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Laser Generation ◽  
Structural Quality ◽  
Quantum Cascade ◽  
Inp Substrate

AbstractThe results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In_0.53Ga_0.47As/Al_0.48In_0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 31 ◽  
pp. 23-26 ◽  
Author(s):  
N. Begum ◽  
A.S. Bhatti ◽  
M. Piccin ◽  
G. Bais ◽  
F. Jabeen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Defects ◽  
Structural Quality ◽  
Spintronic Devices ◽  
Gaas Nanowires ◽  
Potential Applications ◽  
Self Assembled ◽  
Substrate Temperatures

Self-assembled nanowires have attracted much attention due to their potential applications in electronics and optoelectronics. A recent interest in Mn catalyzed GaAs nanowires are due to their potential use in spintronic devices at nanoscale. High densities of Au- and Mncatalyzed self-assembled GaAs nanowires (NWs) with diameter in the range of 20 to 200 nm and length of few microns were synthesized by molecular beam epitaxy (MBE) on different substrates at varied substrate temperatures. These nanowires were investigated by means of μ-Raman spectroscopy at room temperature. The Raman spectra from NWs show an energy downshift and a broadening of the LO and TO phonon lines that differ from those of epitaxial GaAs. We suggest that those downshift and broadening are due to the relaxation of the q=0 selection rule in the presence of structural defects in the nanowires. The results indicate that the use of Mn instead of Au as growth catalyst does not affect the structural quality of the nanowires drastically.

scholarly journals Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6270
Author(s):  
Tristan Smołka ◽  
Katarzyna Posmyk ◽  
Maja Wasiluk ◽  
Paweł Wyborski ◽  
Michał Gawełczyk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Radiative Lifetime ◽  
Optical Quality ◽  
Structural Quality ◽  
Emission Quenching ◽  
Inp Quantum Dots

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

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