Evaluation by room‐temperature electroreflectance of the 77 K dark‐storage time of bulk mercury cadmium telluride measured on metal‐insulator semiconductor devices

1989 ◽  
Vol 7 (2) ◽  
pp. 509-516 ◽  
Author(s):  
Paul M. Raccah ◽  
James W. Garland ◽  
De Yang ◽  
Hisham Abad ◽  
Roger L. Strong ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Room Temperature ◽  
Storage Time ◽  
Mercury Cadmium Telluride ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

1994 ◽  
Vol 43 (11) ◽  
pp. 1883
Author(s):  
HUANG HE ◽  
TANG DING-YUAN ◽  
TONG FEI-MING ◽  
ZHENG GUO-ZHEN
Keyword(s):  
Storage Time ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Dynamic Storage

Traps in ZnS/Anodic Sulfide Film on Mercury Cadmium Telluride

1990 ◽  
Vol 216 ◽  
Author(s):  
S. Hikida ◽  
N. Kajihara ◽  
Y. Miyamoto
Keyword(s):  
Visible Light ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Electron Trap ◽  
Semiconductor Diode ◽  
Trap Level ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sulfide Film ◽  
Flatband Voltage

ABSTRACTWe studied the influence of visible light on the ZnS/anodic sulfide/HgCdTe interface.We measured flatband voltage of metal-insulator-semiconductor diodes with semitransparent electrodes at 77 K. In the dark (i.e., without visible light). The flatband voltage of an metal-insulator-semiconductor diode is 0 V. We scanned visible light from 400 to 800 nm and measured the flatband voltage using the photocapacitance measurement. After an initial positive shift, the flatband voltage moved negative by as the wavelength shortened. We studied the relationship between the flatband voltage shift and photon energy using Fowler plots. Results suggest one electron trap level 1.5 eV above the valence band and two hole trap levels 1.7 and 2.3 eV below the conduction band.ZnS/anodic sulfide films on mercury cadmium telluride, studied using photoluminescence spectroscopy, showed broad photoluminescence peaks at 1.5, 1.7, and 2.3 eV, and the edge emission of the anodic sulfide.These results suggest that photoionization of the electron trap and two hole traps in the ZnS/anodic sulfide film causes the flatband shift.

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

2014 ◽  
Vol 116 (1) ◽  
pp. 014504 ◽  
Author(s):  
R. V. Galatage ◽  
D. M. Zhernokletov ◽  
H. Dong ◽  
B. Brennan ◽  
C. L. Hinkle ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Frequency Dispersion ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States

Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices

1996 ◽  
Vol 80 (5) ◽  
pp. 2873-2882 ◽  
Author(s):  
Helen M. Dauplaise ◽  
Kenneth Vaccaro ◽  
Andrew Davis ◽  
George O. Ramseyer ◽  
Joseph P. Lorenzo
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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