scholarly journals Temperature dependence of metal film growth via low‐energy electron diffraction intensity oscillations: Pt/Pd(100)

1989 ◽  
Vol 7 (3) ◽  
pp. 2162-2166 ◽  
Author(s):  
D. K. Flynn ◽  
J. W. Evans ◽  
P. A. Thiel
1994 ◽  
Vol 01 (02n03) ◽  
pp. 221-227 ◽  
Author(s):  
H. HUANG ◽  
S.Y. TONG ◽  
U. MYLER ◽  
K. JACOBI

The Si ((113) 3×1-H structure has been investigated by a quantitative low-energy electron diffraction intensity analysis. A model with two Si dimers in the unit cell gives best agreement between the calculation and the experimental data. Three-dimensional atomic coordinates have been determined.


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