High‐rate deposition of Al2O3 films using modified cathodic arc plasma deposition processes

1989 ◽  
Vol 7 (3) ◽  
pp. 2346-2349 ◽  
Author(s):  
H. Randhawa
1996 ◽  
Vol 46 (1) ◽  
pp. 77-83 ◽  
Author(s):  
Kwang-Lung Lin ◽  
Ming-Yeong Hwang ◽  
Cheng-Dau Wu

2005 ◽  
Vol 200 (5-6) ◽  
pp. 1391-1394 ◽  
Author(s):  
S.K. Kim ◽  
P.V. Vinh ◽  
J.H. Kim ◽  
T. Ngoc

2015 ◽  
Vol 719-720 ◽  
pp. 127-131
Author(s):  
Min Jung Kim ◽  
Dong Bok Lee

TiAlCrSiN thin films consisting of alternating TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition, and oxidized at 1000°C in air. When oxidized for 10 h, about 1 μm-thick oxide sale formed, and its surface was covered with numerous tiny oxide crystallites. When oxidized for 30 h, about 2.5 μm-thick oxide scale formed, and began to spall from the surface. When oxidized for 80 h, the oxide sale was about 12.2 μm-thick. The film had a reasonable oxidation resistance due mainly to Al, Cr, and Si, which formed protective oxides.


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