Combined surface analysis by synchrotron radiation photoemission spectroscopy and surface extended x‐ray absorption fine structure of oxidation features of metal‐deposited GaAs

1988 ◽  
Vol 6 (3) ◽  
pp. 1451-1455 ◽  
Author(s):  
Masaharu Oshima ◽  
Tomoaki Kawamura ◽  
Satoshi Maeyama ◽  
Tsuneaki Miyahara
Keyword(s):  
Fine Structure ◽  
Synchrotron Radiation ◽  
Surface Analysis ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
Synchrotron Radiation Photoemission

Fluorescence x‐ray absorption fine structure measurements using a synchrotron radiation x‐ray microprobe

1991 ◽  
Vol 62 (11) ◽  
pp. 2545-2549 ◽  
Author(s):  
Shinjiro Hayakawa ◽  
Yohichi Gohshi ◽  
Atsuo Iida ◽  
Sadao Aoki ◽  
Kohei Sato
Keyword(s):  
Fine Structure ◽  
Synchrotron Radiation ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption

2013 ◽  
Vol 740-742 ◽  
pp. 573-576 ◽  
Author(s):  
Wei Zeng ◽  
Zhe Chuan Feng ◽  
Rui Sheng Zheng ◽  
Ling Yun Jang ◽  
Chee Wei Liu
Keyword(s):  
Electronic Structure ◽  
Fine Structure ◽  
High Resolution ◽  
Synchrotron Radiation ◽  
Angular Dependence ◽  
Comparative Studies ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

High-resolution synchrotron radiation X-ray absorption of Si K-edge have been employed to investigate 6H-, 4H- and 3C-SiC. Detailed analyses of the extended x-ray absorption fine structure are taken by using the IFEFFIT program, and significant results on the atomic bonding are obtained from these comparative studies. The x-ray absorption near-edge structures of the Si K-edge are investigated, and the electronic structure of 3C-, 4H- and 6H-SiC are studied. In order to investigate the angular dependence, the x-ray absorption near-edge spectra were operated at 55o and 90o of the angle between the surface and the X-ray direction.

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