Charge state splittings of deep levels in Hg1−xCdxTe

1988 ◽  
Vol 6 (4) ◽  
pp. 2675-2680 ◽  
Author(s):  
Charles W. Myles
Keyword(s):  
Charge State ◽  
Deep Levels

Theory of charge-state splittings of deep levels associated with sulfur pairs in Si

1989 ◽  
Vol 40 (11) ◽  
pp. 7888-7891 ◽  
Author(s):  
Gyungock Kim ◽  
John D. Dow ◽  
Seongbok Lee
Keyword(s):  
Charge State ◽  
Deep Levels

scholarly journals Optical modulation in silicon waveguides via charge state control of deep levels

2009 ◽  
Vol 17 (21) ◽  
pp. 18571 ◽  
Author(s):  
D F Logan ◽  
P E Jessop ◽  
A P Knights ◽  
G Wojcik ◽  
A Goebel
Keyword(s):  
Charge State ◽  
Deep Levels ◽  
Optical Modulation ◽  
State Control ◽  
Silicon Waveguides

Theory of charge-state splittings of deep levels

1985 ◽  
Vol 31 (6) ◽  
pp. 3910-3914 ◽  
Author(s):  
Seongbok Lee ◽  
John D. Dow ◽  
Otto F. Sankey
Keyword(s):  
Charge State ◽  
Deep Levels

scholarly journals Влияние глубоких центров на статистическую задержку микроплазменного пробоя в арсенид-галлиевых светодиодах

2018 ◽  
Vol 52 (8) ◽  
pp. 944
Author(s):  
В.К. Ионычев ◽  
А.А. Шестеркина
Keyword(s):  
Gallium Arsenide ◽  
Energy Spectrum ◽  
Charge State ◽  
Statistical Study ◽  
Deep Levels ◽  
Reverse Voltage ◽  
Light Emitting ◽  
Deep Centers ◽  
Statistical Delay ◽  
Microplasma Breakdown

AbstractA statistical study of the microplasma-breakdown delay in gallium-arsenide light-emitting diodes is performed. The significant effect of deep centers on the microplasma breakdown of gallium arsenide p–n junctions is detected. It is shown that the statistical delay of the microplasma breakdown makes it possible to estimate the energy spectrum of deep levels in the microplasma channel when varying the charge state of deep centers by decreasing the reverse voltage applied to the p–n junction. In the temperature range of 250–350 K, the effect of three deep levels is detected and their parameters are determined.

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

2007 ◽  
Vol 556-557 ◽  
pp. 331-334 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Charge State ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Annealing Stage ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

The authors have investigated deep levels in electron-irradiated n- and p-type 4H-SiC epilayers by deep level transient spectroscopy (DLTS). By low-energy electron irradiation at 116 keV, the Z1/2 and EH6/7 concentrations are increased in n-type samples, and the concentrations are almost unchanged after annealing at 950°C for 30 min. In p-type samples, the unknown centers, namely EP1 and EP2, are introduced by irradiation. By annealing at 950°C, the unknown centers are annealed out. The HK4 center (EV + 1.44 eV) is increased by the electron irradiation and subsequent annealing at 950°C. The dependence of increase in the trap concentrations by irradiation (NT) on the electron fluence reveals that NT for the Z1/2 and EH6/7 centers is in proportional to the 0.7 power of electron fluence, while the slope of the plot is 0.5 for the HK4 center. The Z1/2 and EH6/7 centers show similar annealing stage and are thermally stable up to 1500-1600°C, while the HK4 center is annealed out at about 1350°C. The Z1/2 and EH6/7 centers may be derived from a same origin (single carbon vacancy: VC) but different charge state. The HK4 center may be a complex including VC.

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

2011 ◽  
Vol 36 (19) ◽  
pp. 3717 ◽  
Author(s):  
D. F. Logan ◽  
P. Velha ◽  
M. Sorel ◽  
R. M. De La Rue ◽  
G. Wojcik ◽  
...  
Keyword(s):  
Low Power ◽  
Charge State ◽  
Deep Levels ◽  
Optical Modulation ◽  
Silicon Waveguides ◽  
State Switching

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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