Growth of Al and Al nitride films in N2–Ne and N2–(Ne+Ar) discharges: Construction of a ternary gas phase diagram

1988 ◽  
Vol 6 (3) ◽  
pp. 1712-1716 ◽  
Author(s):  
James R. Siettmann ◽  
Carolyn Rubin Aita
Keyword(s):  
2009 ◽  
Vol 45 (1) ◽  
pp. 89-93 ◽  
Author(s):  
Y. Du ◽  
X. Yuan ◽  
W. Sun ◽  
B. Hu

A thermodynamic modeling for the Al-K system is conducted. The thermodynamic parameters for liquid, (Al), and (K) are evaluated by using the experimental phase diagram data from the literature. The gas phase is described with an ideal gas model. The calculated Al-K phase diagram agrees well with the experimental data. In particular, the observed monotectic reaction is well described by the present calculation.


2019 ◽  
Vol 46 (6) ◽  
pp. 065106
Author(s):  
Subhasis Samanta ◽  
Sandeep Chatterjee ◽  
Bedangadas Mohanty

1974 ◽  
Vol 33 (4) ◽  
pp. 219-222 ◽  
Author(s):  
Gordon A. Thomas ◽  
T. M. Rice ◽  
J. C. Hensel

2004 ◽  
Vol 18 (14) ◽  
pp. 2057-2069 ◽  
Author(s):  
JIANXIANG TIAN ◽  
YUANXING GUI

In this paper, an argon-like canonical system is studied. We introduce five hypothesis to deal with the total potential of the system. Then the balanced liquid–gas coexistence phenomenon is analyzed. Good equations of state and phase diagram are given.


1991 ◽  
Vol 233 ◽  
Author(s):  
John A. Ripmeester ◽  
Christopher I. Ratcliffe

ABSTRACTIt is shown that the interpretation of 129Xe chemical shift measurements in microporous solids is not simple, and that considerable caution must be used both in the measurement and interpretation of results, especially for large pore systems. Nevertheless, useful information can be obtained on the phase diagram of xenon in pore systems, and on transport within the solid and between the solid and the gas phase.


2007 ◽  
Vol 80 (5) ◽  
pp. 56002 ◽  
Author(s):  
Y. V. Kalyuzhnyi ◽  
I. A. Protsykevytch ◽  
P. T. Cummings

2009 ◽  
Vol 156-158 ◽  
pp. 49-54 ◽  
Author(s):  
Lutz Raabe ◽  
Jan Ehrig ◽  
Sindy Würzner ◽  
Olf Pätzold ◽  
Michael Stelter ◽  
...  

The influence of the CO concentration in the gas phase on the distribution of carbon in Bridgman-grown, multicrystalline silicon is studied. The growth experiments were conducted in a high-vacuum induction furnace either under a CO enriched atmosphere or under CO free conditions. Furthermore, thermodynamic calculations in the system silicon/oxygen/carbon were done. In crystal growth under a CO enriched atmosphere a SiC-containing layer is formed on the top surface of the melt in agreement with the calculated phase diagram. In this case, the level of substitutional carbon in the cystal was found to be almost constant, whereas the axial carbon concentration in crystals grown under CO free conditions increases monotonously according to Scheil's law.


2003 ◽  
Vol 12 (1) ◽  
pp. 79-83
Author(s):  
Zhang Zhi ◽  
Chen Li-Rong

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